Transistors

Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 320. Minimum hFE gain: 180. Collector current: 5A. Id(imp): 8A. Marking on the case: DK. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SANYO--PCP. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 20V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DK

Quantity per case: 1. Semiconductor material: silicon. Collector current: 3.5A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A)

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 6A. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V

Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: bipolar transistor. Max hFE gain: 270. Minimum hFE gain: 120. Collector current: 1A. Ic(pulse): 2A. Marking on the case: DAQ. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial planar type'. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: NPN. Operating temperature: +55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 32V. Vebo: 5V. Spec info: screen printing/SMD code DAQ

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: switching circuits. Max hFE gain: 280. Minimum hFE gain: 70. Collector current: 7A. Id(imp): 12A. Note: complementary transistor (pair) 2SB1135. Pd (Power Dissipation, Max): 30W. Housing: TO-220FP. Housing (according to data sheet): TO-220ML. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 50V. Vebo: 6V

Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: switching circuits. Max hFE gain: 280. Minimum hFE gain: 70. Collector current: 12A. Id(imp): 15A. Note: complementary transistor (pair) 2SB1136. Pd (Power Dissipation, Max): 30W. Housing: TO-220FP. Housing (according to data sheet): TO-220ML. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 50V. Vebo: 6V

Quantity per case: 1. Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-E-L. Collector current: 2A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. Spec info: D-PAK (ROHM--CPT3)

Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF/E (F). Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Spec info: complementary transistor (pair) 2SB1186A

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: insulated package transistor. Collector current: 2A. Note: >1000. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. CE diode: yes

Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Current switching. Max hFE gain: 560. Minimum hFE gain: 35. Collector current: 3A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 15W. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): D-PAK TO-252. Type of transistor: NPN. Vcbo: 60V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Spec info: complementary transistor (pair) 2SB1202. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 400. Minimum hFE gain: 35. Collector current: 8A. Ic(pulse): 12A. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistors'. Tf(max): 20 ns. Tf(min): 20 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: complementary transistor (pair) 2SB1204

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: 'driver'. Max hFE gain: 5000. Minimum hFE gain: 2000. Collector current: 4A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220ML. Type of transistor: NPN. Vcbo: 70V. Saturation voltage VCE(sat): 0.9V. Collector/emitter voltage Vceo: 60V. Spec info: 'Epitaxial Planar Silicon Darlington Transistor'

Quantity per case: 1. Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V

Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Color TV Horizontal Deflection Output Amp.. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 5A. Ic(pulse): 20A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.1us. Housing (according to data sheet): TO-3PML. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Housing: TO-3PF (SOT399, 2-16E3A)

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low-Frequency Power Amplifier. Collector current: 3A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. Spec info: complementary transistor (pair) 2SB1274

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: insulated package transistor. Minimum hFE gain: 3000. Collector current: 4A. Note: =3000. Pd (Power Dissipation, Max): 30W. RoHS: yes. Type of transistor: NPN. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) 2SB1342

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: M31/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1500V/650V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 50W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 50W. Operating temperature range min (°C): 1500V. Operating temperature range max (°C): 650V

Quantity per case: 1. Semiconductor material: silicon. Collector current: 10A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1400V. Collector/emitter voltage Vceo: 650V. Function: S-L TV/HA(F)

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Io-sat DC/DC. Max hFE gain: 350. Minimum hFE gain: 200. Collector current: 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 25V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 2.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 1500V

Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 3A. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) 2SB1366. BE diode: no. CE diode: no

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-220FP. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V/60V. Collector current Ic [A], max.: 3A. Maximum dissipation Ptot [W]: 30W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 3A. Operating temperature range min (°C): 30W. Operating temperature range max (°C): PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 80V