2SD667

Quantity	excl. VAT	VAT incl.
1 - 4	1.11$	1.11$
5 - 9	1.05$	1.05$
10 - 24	1.00$	1.00$
25 - 49	0.94$	0.94$
50 - 71	0.92$	0.92$

Quantity	U.P
1 - 4	1.11$	1.11$
5 - 9	1.05$	1.05$
10 - 24	1.00$	1.00$
25 - 49	0.94$	0.94$
50 - 71	0.92$	0.92$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 71

Set of 1

2SD667. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 120. Minimum hFE gain: 60. Collector current: 1A. Ic(pulse): 2A. Note: 9mm. Marking on the case: D667. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Epitaxial. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB647. Quantity in stock updated on 25/12/2024, 03:25.

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Delivery in 2-3 days, with postal tracking!