2SD600K

2SD600K. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 320. Minimum hFE gain: 20. Collector current: 1A. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 8W. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 100 ns. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB631K. Housing: TO-126 (TO-225, SOT-32). Quantity in stock updated on 25/12/2024, 02:25.