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2SD762

2SD762
[TITLE]
Quantity excl. VAT VAT incl.
1 - 2 1.30$ 1.30$
Quantity U.P
1 - 2 1.30$ 1.30$
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Quantity in stock : 2
Set of 1

2SD762. RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 3A. Maximum dissipation Ptot [W]: 25W. Quantity in stock updated on 25/12/2024, 05:25.

Equivalent products :

Quantity in stock : 89
TIP31C

TIP31C

Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. ...
TIP31C
Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP32C. BE diode: no. CE diode: no
TIP31C
Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP32C. BE diode: no. CE diode: no
Set of 1
0.69$ VAT incl.
(0.69$ excl. VAT)
0.69$

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TIP32C

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Cost): 160pF. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production dat...
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Quantity in stock : 110
CCAP10UF100V

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Capacitance: 10uF. Diameter: 8mm. Lifespan: 1000 heures. Lenght: 11mm. Configuration: vertical mount...
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IRFP9140N

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C(in): 1300pF. Cost): 400pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type o...
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IRFP150N

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C(in): 1900pF. Cost): 450pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Dra...
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2N6027

2N6027

Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (P...
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1N4148

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Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
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Quantity in stock : 128
BC237B

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Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Collector current: 0.1A. Pd (Pow...
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Quantity in stock : 37
BTB24-600B

BTB24-600B

Conditioning: plastic tube. Igt (max): 100mA. Igt (Type): 50mA. Ih (max): 80mA. Ih (Type): 80mA. IT(...
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TIP42C

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Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain:...
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Quantity in stock : 3294
LM358P

LM358P

Number of circuits: 2. Bandwidth [MHz]: 0.7 MHz. Slew rate [V/us]: 0.3V/us. Input offset voltage max...
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