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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 3A, TO-220, TO-220, 60V - 2SD880-PMC

NPN transistor, 3A, TO-220, TO-220, 60V - 2SD880-PMC
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.04$ 1.04$
5 - 9 0.99$ 0.99$
Quantity U.P
1 - 4 1.04$ 1.04$
5 - 9 0.99$ 0.99$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 9
Set of 1

NPN transistor, 3A, TO-220, TO-220, 60V - 2SD880-PMC. NPN transistor, 3A, TO-220, TO-220, 60V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity in stock updated on 19/04/2025, 23:25.

Equivalent products :

Quantity in stock : 68
BD243C-STM

BD243C-STM

NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according...
BD243C-STM
NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no
BD243C-STM
NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no
Set of 1
2.02$ VAT incl.
(2.02$ excl. VAT)
2.02$
Quantity in stock : 428
BD243CG

BD243CG

NPN transistor, 6A, TO-220, 100V, TO-220AB, 100V. Collector current: 6A. Housing: TO-220. Collector-...
BD243CG
NPN transistor, 6A, TO-220, 100V, TO-220AB, 100V. Collector current: 6A. Housing: TO-220. Collector-Emitter Voltage VCEO: 100V. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 65W. Max frequency: 3MHz. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V
BD243CG
NPN transistor, 6A, TO-220, 100V, TO-220AB, 100V. Collector current: 6A. Housing: TO-220. Collector-Emitter Voltage VCEO: 100V. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 65W. Max frequency: 3MHz. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V
Set of 1
1.73$ VAT incl.
(1.73$ excl. VAT)
1.73$
Quantity in stock : 73
BD243C-CDIL

BD243C-CDIL

NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according...
BD243C-CDIL
NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no
BD243C-CDIL
NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$

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