Cost): 19pF. Quantity per case: 1. Semiconductor material: silicon. FT: 155 MHz. Function: HF. Max hFE gain: 320. Minimum hFE gain: 160. Collector current: 1.2A. Ic(pulse): 2.5A. Marking on the case: C2690A Y. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1220A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no