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Semiconductors Transistors

2SC2910

2SC2910
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Quantity excl. VAT VAT incl.
1 - 4 2.92$ 2.92$
5 - 9 2.77$ 2.77$
10 - 24 2.62$ 2.62$
25 - 49 2.48$ 2.48$
50 - 99 2.42$ 2.42$
100 - 249 2.36$ 2.36$
250+ 2.25$ 2.25$
Quantity U.P
1 - 4 2.92$ 2.92$
5 - 9 2.77$ 2.77$
10 - 24 2.62$ 2.62$
25 - 49 2.48$ 2.48$
50 - 99 2.42$ 2.42$
100 - 249 2.36$ 2.36$
250+ 2.25$ 2.25$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

2SC2910. RoHS: yes. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC2910. Collector-emitter voltage Uceo [V]: 180V/160V. Collector current Ic [A], max.: 70mA. Cutoff frequency ft [MHz]: 400. Maximum dissipation Ptot [W]: 0.6W. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.08V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): 70mA. Operating temperature range max (°C): 140mA. Spec info: complementary transistor (pair) 2SA1208. Quantity in stock updated on 26/12/2024, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 38
2SC3467

2SC3467

Cost): 1.7pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain...
2SC3467
Cost): 1.7pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 320. Minimum hFE gain: 40. Collector current: 0.1A. Ic(pulse): 0.2A. Marking on the case: C3467. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): SC-51 ( MP ). Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 200V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Note: 9mm height. Spec info: VCB=30V, f=1MHz, Cob 1.7pF, Cre 1.2pF. Function: Video, Hi-def. BE diode: no. CE diode: no
2SC3467
Cost): 1.7pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 320. Minimum hFE gain: 40. Collector current: 0.1A. Ic(pulse): 0.2A. Marking on the case: C3467. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): SC-51 ( MP ). Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 200V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Note: 9mm height. Spec info: VCB=30V, f=1MHz, Cob 1.7pF, Cre 1.2pF. Function: Video, Hi-def. BE diode: no. CE diode: no
Set of 1
2.35$ VAT incl.
(2.35$ excl. VAT)
2.35$
Quantity in stock : 20805
BF421

BF421

Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Collector current: 50mA. Ic(pulse...
BF421
Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Collector current: 50mA. Ic(pulse): 100mA. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BF420. CE diode: yes
BF421
Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Collector current: 50mA. Ic(pulse): 100mA. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BF420. CE diode: yes
Set of 10
1.21$ VAT incl.
(1.21$ excl. VAT)
1.21$
Quantity in stock : 96
2SC2705

2SC2705

Cost): 1.8pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 200 MHz. Function: au...
2SC2705
Cost): 1.8pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 50mA. Ic(pulse): 800mA. Marking on the case: C2705. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: NPN. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Number of terminals: 3. Note: 9mm. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1145. BE diode: no. CE diode: no
2SC2705
Cost): 1.8pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 50mA. Ic(pulse): 800mA. Marking on the case: C2705. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: NPN. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Number of terminals: 3. Note: 9mm. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1145. BE diode: no. CE diode: no
Set of 1
1.35$ VAT incl.
(1.35$ excl. VAT)
1.35$

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Quantity in stock : 75
2SA1145

2SA1145

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max h...
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2SA1306

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Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: insulated package tran...
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2SC1845

2SC1845

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI au...
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2SA1492

2SA1492

Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: 15A. Marking o...
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Quantity in stock : 109
2SC2240GR

2SC2240GR

Cost): 3pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: ...
2SC2240GR
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Quantity in stock : 13
2SC2911

2SC2911

Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Min...
2SC2911
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Quantity in stock : 96
2SC3423

2SC3423

Semiconductor material: silicon. FT: 200 MHz. Function: NF-L. Collector current: 0.05A. Pd (Power Di...
2SC3423
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Quantity in stock : 146
2SC2240BL

2SC2240BL

Cost): 3pF. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max ...
2SC2240BL
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