Transistors

Semiconductor material: silicon. FT: 120 MHz. Function: High Current Switching. Max hFE gain: 240. Minimum hFE gain: 70. Collector current: 5A. Marking on the case: C3074. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Silicon NPN Epitaxial Type (PCT process). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Number of terminals: 2. Note: for switching applications. Quantity per case: 1. Note: complementary transistor (pair) 2SA1244. Spec info: Lo-sat--Vce(sat)--0.2V

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: D8A/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/19V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.3W

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: D6/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 150mA. Maximum dissipation Ptot [W]: 0.2W

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 150mA. Maximum dissipation Ptot [W]: 0.4W

Semiconductor material: silicon. FT: 120 MHz. Function: TV-NF/E. Collector current: 1.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 180V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1249. Housing: TO-126 (TO-225, SOT-32)

Semiconductor material: silicon. Collector current: 3A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 900V. Collector/emitter voltage Vceo: 800V. Quantity per case: 1

Semiconductor material: silicon. FT: 15 MHz. Function: Switching Regulator Applications. Max hFE gain: 40. Minimum hFE gain: 20. Collector current: 3A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.7us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 900V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 800V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1

Semiconductor material: silicon. FT: 15 MHz. Function: S-L. Collector current: 6A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Type of transistor: NPN. Vcbo: 900V. Collector/emitter voltage Vceo: 800V. Quantity per case: 1

RoHS: no. Housing: PCB soldering. Housing: TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC3157. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

Semiconductor material: silicon. FT: 30 MHz. Collector current: 10A. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Collector/emitter voltage Vceo: 140V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1265

Semiconductor material: silicon. FT: 550 MHz. Collector current: 0.02A. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. Quantity per case: 1

Semiconductor material: silicon. FT: 660 MHz. Function: TV-ZF. Collector current: 0.05A. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1

Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Collector current: 0.15A. Marking on the case: C3198. Pd (Power Dissipation, Max): 0.4W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

Resistor B: no. BE resistor: PCB soldering. C(in): TO-92. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Max hFE gain: 700. Minimum hFE gain: 70. Collector current: 150mA. Temperature: +125°C. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Number of terminals: 3. Spec info: replacement KTA1267. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 200 MHz. Function: Hi-Beta, lo-sat.. Minimum hFE gain: 500. Collector current: 2A. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Tf(max): 1.2us. Tf(min): 1us. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 40V. Vebo: 7V. Number of terminals: 3. Note: 9mm. Quantity per case: 1

Cost): 250pF. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Max hFE gain: 140. Minimum hFE gain: 40. Collector current: 15A. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1294. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 60 MHz. Collector current: 17A. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Type of transistor: NPN. Collector/emitter voltage Vceo: 230V. Number of terminals: 3. Quantity per case: 1. Spec info: with this case only while stocks last!

Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 12A. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1301

Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Collector/emitter voltage Vceo: 200V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1302. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 60 MHz. Collector current: 14A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1303

Semiconductor material: silicon. FT: 100 MHz. Function: insulated package transistor. Max hFE gain: 240. Minimum hFE gain: 70. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Housing: TO-220FP. Type of transistor: NPN. Vcbo: 160V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1306

Semiconductor material: silicon. FT: 120 MHz. Function: High Speed ​​Switching. Max hFE gain: 240. Minimum hFE gain: 70. Collector current: 5A. Ic(pulse): 8A. Marking on the case: C3303. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Tf(max): 0.1us. Tf(min): 0.1us. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 80V. Vebo: 7V. Number of terminals: 2. Quantity per case: 1

Semiconductor material: silicon. FT: 120 MHz. Collector current: 5A. Ic(pulse): 8A. Assembly/installation: surface-mounted component (SMD). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 100V. Vebo: 8V. Quantity per case: 1. Function: NF/SL. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 120 MHz. Function: High-Voltage Switching Applications. Collector current: 0.7A. Pd (Power Dissipation, Max): 0.7W. Type of transistor: NPN. Collector/emitter voltage Vceo: 180V. Note: hFE 140...280. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1319

Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Vcbo: 900V. Collector/emitter voltage Vceo: 500V. Quantity per case: 1