2SC2713-GR

Quantity	excl. VAT	VAT incl.
1 - 4	3.69$	3.69$
5 - 9	3.51$	3.51$
10 - 24	3.32$	3.32$
25 - 49	3.14$	3.14$
50 - 99	3.06$	3.06$
100 - 249	2.60$	2.60$
250 - 305	2.50$	2.50$

Quantity	U.P
1 - 4	3.69$	3.69$
5 - 9	3.51$	3.51$
10 - 24	3.32$	3.32$
25 - 49	3.14$	3.14$
50 - 99	3.06$	3.06$
100 - 249	2.60$	2.60$
250 - 305	2.50$	2.50$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 305

Set of 1

2SC2713-GR. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 700. Minimum hFE gain: 200. Collector current: 0.1A. Marking on the case: DG. Pd (Power Dissipation, Max): 150mW. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 300mV. Collector/emitter voltage Vceo: 120V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code DG. Spec info: complementary transistor (pair) 2SA1163. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 16:25.

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Delivery in 2-3 days, with postal tracking!