Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.70$ | 0.70$ |
10 - 24 | 0.66$ | 0.66$ |
25 - 49 | 0.63$ | 0.63$ |
50 - 99 | 0.59$ | 0.59$ |
100 - 249 | 0.58$ | 0.58$ |
250 - 401 | 0.56$ | 0.56$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.70$ | 0.70$ |
10 - 24 | 0.66$ | 0.66$ |
25 - 49 | 0.63$ | 0.63$ |
50 - 99 | 0.59$ | 0.59$ |
100 - 249 | 0.58$ | 0.58$ |
250 - 401 | 0.56$ | 0.56$ |
2SC2682. Semiconductor material: silicon. FT: 200 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 8W. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: NPN. Collector/emitter voltage Vceo: 180V. Function: hFE 100...200. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 16:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.