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Semiconductors
Transistors

Transistors

3185 products available
Products per page :
1...111213 1415...128
Out of stock
2SC1970

2SC1970

Semiconductor material: silicon. FT: 175 MHz. Function: VHF-Tr/E. Collector current: 0.6A. Pd (Power...
2SC1970
Semiconductor material: silicon. FT: 175 MHz. Function: VHF-Tr/E. Collector current: 0.6A. Pd (Power Dissipation, Max): 1.3W. Housing: TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. Quantity per case: 1
2SC1970
Semiconductor material: silicon. FT: 175 MHz. Function: VHF-Tr/E. Collector current: 0.6A. Pd (Power Dissipation, Max): 1.3W. Housing: TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 40V. Quantity per case: 1
Set of 1
11.44$ VAT incl.
(11.44$ excl. VAT)
11.44$
Out of stock
2SC2002

2SC2002

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SC2002
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 300mA. Maximum dissipation Ptot [W]: 0.6W
2SC2002
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 300mA. Maximum dissipation Ptot [W]: 0.6W
Set of 1
0.64$ VAT incl.
(0.64$ excl. VAT)
0.64$
Quantity in stock : 2
2SC2003

2SC2003

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SC2003
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 300mA. Maximum dissipation Ptot [W]: 0.6W
2SC2003
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 300mA. Maximum dissipation Ptot [W]: 0.6W
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 13
2SC2009

2SC2009

Semiconductor material: silicon. FT: 550 MHz. Collector current: 0.1A. Type of transistor: NPN. Coll...
2SC2009
Semiconductor material: silicon. FT: 550 MHz. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 35V. Quantity per case: 1
2SC2009
Semiconductor material: silicon. FT: 550 MHz. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 35V. Quantity per case: 1
Set of 1
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$
Quantity in stock : 4
2SC2023

2SC2023

Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Minimum hFE gain: 30. Collector current:...
2SC2023
Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Minimum hFE gain: 30. Collector current: 2A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 300V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1
2SC2023
Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Minimum hFE gain: 30. Collector current: 2A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 300V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1
Set of 1
5.30$ VAT incl.
(5.30$ excl. VAT)
5.30$
Out of stock
2SC2053

2SC2053

Semiconductor material: silicon. FT: 175 MHz. Max hFE gain: 180. Minimum hFE gain: 10. Collector cur...
2SC2053
Semiconductor material: silicon. FT: 175 MHz. Max hFE gain: 180. Minimum hFE gain: 10. Collector current: 0.3A. Temperature: +135°C. Pd (Power Dissipation, Max): 0.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Epytaxial Planar Type. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 40V. Collector/emitter voltage Vceo: 17V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. Function: RF amplifiers on VHF band
2SC2053
Semiconductor material: silicon. FT: 175 MHz. Max hFE gain: 180. Minimum hFE gain: 10. Collector current: 0.3A. Temperature: +135°C. Pd (Power Dissipation, Max): 0.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Epytaxial Planar Type. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 40V. Collector/emitter voltage Vceo: 17V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. Function: RF amplifiers on VHF band
Set of 1
3.07$ VAT incl.
(3.07$ excl. VAT)
3.07$
Quantity in stock : 14
2SC2058

2SC2058

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SC2058
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.25W
2SC2058
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.25W
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$
Quantity in stock : 8
2SC2060

2SC2060

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: D18/C. Configur...
2SC2060
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: D18/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/32V. Collector current Ic [A], max.: 700mA. Maximum dissipation Ptot [W]: 0.75W
2SC2060
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: D18/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/32V. Collector current Ic [A], max.: 700mA. Maximum dissipation Ptot [W]: 0.75W
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 20
2SC2063

2SC2063

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: E-33. Configura...
2SC2063
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: E-33. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.25W
2SC2063
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: E-33. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.25W
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 44
2SC2073

2SC2073

Semiconductor material: silicon. FT: 4 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 25...
2SC2073
Semiconductor material: silicon. FT: 4 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 150V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA940. BE diode: no. CE diode: no
2SC2073
Semiconductor material: silicon. FT: 4 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 150V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA940. BE diode: no. CE diode: no
Set of 1
1.78$ VAT incl.
(1.78$ excl. VAT)
1.78$
Quantity in stock : 5
2SC2166

2SC2166

Semiconductor material: silicon. FT: 27 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 6W....
2SC2166
Semiconductor material: silicon. FT: 27 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 6W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 75V. Quantity per case: 1
2SC2166
Semiconductor material: silicon. FT: 27 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 6W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 75V. Quantity per case: 1
Set of 1
13.07$ VAT incl.
(13.07$ excl. VAT)
13.07$
Quantity in stock : 20
2SC2210

2SC2210

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SC2210
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.25W
2SC2210
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.25W
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 5
2SC2236

2SC2236

Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Collector cur...
2SC2236
Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Collector current: 1.5A. Pd (Power Dissipation, Max): 900mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA966. BE diode: no. CE diode: no
2SC2236
Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Collector current: 1.5A. Pd (Power Dissipation, Max): 900mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA966. BE diode: no. CE diode: no
Set of 1
1.10$ VAT incl.
(1.10$ excl. VAT)
1.10$
Quantity in stock : 6
2SC2238

2SC2238

Semiconductor material: silicon. FT: 100 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): ...
2SC2238
Semiconductor material: silicon. FT: 100 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA968
2SC2238
Semiconductor material: silicon. FT: 100 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA968
Set of 1
1.73$ VAT incl.
(1.73$ excl. VAT)
1.73$
Quantity in stock : 146
2SC2240BL

2SC2240BL

Cost): 3pF. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max ...
2SC2240BL
Cost): 3pF. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 700. Minimum hFE gain: 350. Collector current: 0.1A. Marking on the case: C2240BL. Temperature: +125°C. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA970BL. BE diode: no. CE diode: no
2SC2240BL
Cost): 3pF. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 700. Minimum hFE gain: 350. Collector current: 0.1A. Marking on the case: C2240BL. Temperature: +125°C. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA970BL. BE diode: no. CE diode: no
Set of 1
2.25$ VAT incl.
(2.25$ excl. VAT)
2.25$
Quantity in stock : 109
2SC2240GR

2SC2240GR

Cost): 3pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: ...
2SC2240GR
Cost): 3pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 0.1A. Marking on the case: C224GR. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA970GR. BE diode: no. CE diode: no
2SC2240GR
Cost): 3pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 0.1A. Marking on the case: C224GR. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA970GR. BE diode: no. CE diode: no
Set of 1
0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
Quantity in stock : 1
2SC2274

2SC2274

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SC2274
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.6W
2SC2274
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.6W
Set of 1
0.67$ VAT incl.
(0.67$ excl. VAT)
0.67$
Quantity in stock : 4
2SC2275

2SC2275

Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 35. Collector cur...
2SC2275
Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 35. Collector current: 1.5A. Ic(pulse): 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
2SC2275
Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 35. Collector current: 1.5A. Ic(pulse): 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
5.60$ VAT incl.
(5.60$ excl. VAT)
5.60$
Quantity in stock : 2
2SC2278

2SC2278

Semiconductor material: silicon. FT: 80 MHz. Function: VID-L. Collector current: 0.1A. Type of trans...
2SC2278
Semiconductor material: silicon. FT: 80 MHz. Function: VID-L. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 300V. Quantity per case: 1
2SC2278
Semiconductor material: silicon. FT: 80 MHz. Function: VID-L. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 300V. Quantity per case: 1
Set of 1
2.34$ VAT incl.
(2.34$ excl. VAT)
2.34$
Quantity in stock : 20
2SC2295

2SC2295

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-236. Configu...
2SC2295
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-236. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.2W
2SC2295
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-236. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.2W
Set of 1
0.69$ VAT incl.
(0.69$ excl. VAT)
0.69$
Quantity in stock : 5
2SC2344

2SC2344

Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. C...
2SC2344
Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. Collector current: 1.5A. Ic(pulse): 3A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Function: High-Voltage Switching, AF Power Amplifier. Spec info: complementary transistor (pair) 2SA1011. BE diode: no. CE diode: no
2SC2344
Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. Collector current: 1.5A. Ic(pulse): 3A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Function: High-Voltage Switching, AF Power Amplifier. Spec info: complementary transistor (pair) 2SA1011. BE diode: no. CE diode: no
Set of 1
3.95$ VAT incl.
(3.95$ excl. VAT)
3.95$
Quantity in stock : 6
2SC2352

2SC2352

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SC2352
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.25W
2SC2352
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.25W
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$
Out of stock
2SC2363

2SC2363

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configur...
2SC2363
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/100V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.5W
2SC2363
RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/100V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.5W
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$
Quantity in stock : 99
2SC2383

2SC2383

Cost): 20pF. Semiconductor material: silicon. FT: 20 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Mi...
2SC2383
Cost): 20pF. Semiconductor material: silicon. FT: 20 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 160. Collector current: 1A. Marking on the case: C2383 Y. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1013. BE diode: no. CE diode: no
2SC2383
Cost): 20pF. Semiconductor material: silicon. FT: 20 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 160. Collector current: 1A. Marking on the case: C2383 Y. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1013. BE diode: no. CE diode: no
Set of 1
0.69$ VAT incl.
(0.69$ excl. VAT)
0.69$
Quantity in stock : 178
2SC2412

2SC2412

Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Collector cu...
2SC2412
Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Collector current: 0.15A. Marking on the case: BQ. Temperature: +155°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 400mV. Collector/emitter voltage Vceo: 50V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code BQ. Spec info: complementary transistor (pair) 2SA1037. BE diode: no. CE diode: no
2SC2412
Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Collector current: 0.15A. Marking on the case: BQ. Temperature: +155°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 400mV. Collector/emitter voltage Vceo: 50V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code BQ. Spec info: complementary transistor (pair) 2SA1037. BE diode: no. CE diode: no
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