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Semiconductors Transistors

2SC2632

2SC2632
Quantity excl. VAT VAT incl.
1 - 4 0.72$ 0.72$
5 - 9 0.68$ 0.68$
10 - 24 0.65$ 0.65$
25 - 49 0.61$ 0.61$
50 - 99 0.60$ 0.60$
100 - 249 0.58$ 0.58$
250+ 0.55$ 0.55$
Quantity U.P
1 - 4 0.72$ 0.72$
5 - 9 0.68$ 0.68$
10 - 24 0.65$ 0.65$
25 - 49 0.61$ 0.61$
50 - 99 0.60$ 0.60$
100 - 249 0.58$ 0.58$
250+ 0.55$ 0.55$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

2SC2632. RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: D17/C. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.75W. Quantity in stock updated on 26/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 13
2SC2911

2SC2911

Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Min...
2SC2911
Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Collector current: 0.14A. Ic(pulse): 0.2A. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 180V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1209. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
2SC2911
Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Collector current: 0.14A. Ic(pulse): 0.2A. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 180V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1209. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
1.89$ VAT incl.
(1.89$ excl. VAT)
1.89$
Out of stock
2SC2910

2SC2910

RoHS: yes. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configu...
2SC2910
RoHS: yes. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC2910. Collector-emitter voltage Uceo [V]: 180V/160V. Collector current Ic [A], max.: 70mA. Cutoff frequency ft [MHz]: 400. Maximum dissipation Ptot [W]: 0.6W. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.08V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): 70mA. Operating temperature range max (°C): 140mA. Spec info: complementary transistor (pair) 2SA1208
2SC2910
RoHS: yes. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC2910. Collector-emitter voltage Uceo [V]: 180V/160V. Collector current Ic [A], max.: 70mA. Cutoff frequency ft [MHz]: 400. Maximum dissipation Ptot [W]: 0.6W. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.08V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): 70mA. Operating temperature range max (°C): 140mA. Spec info: complementary transistor (pair) 2SA1208
Set of 1
2.92$ VAT incl.
(2.92$ excl. VAT)
2.92$
Quantity in stock : 54
KSC2310-Y

KSC2310-Y

Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240....
KSC2310-Y
Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 0.05A. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. BE diode: no. CE diode: no
KSC2310-Y
Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 0.05A. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. BE diode: no. CE diode: no
Set of 1
0.81$ VAT incl.
(0.81$ excl. VAT)
0.81$

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