Quantity | excl. VAT | VAT incl. |
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1 - 4 | 5.60$ | 5.60$ |
Quantity | U.P | |
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1 - 4 | 5.60$ | 5.60$ |
2SC2275. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 35. Collector current: 1.5A. Ic(pulse): 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.
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