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2SC2275

2SC2275
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[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 5.60$ 5.60$
Quantity U.P
1 - 4 5.60$ 5.60$
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Quantity in stock : 4
Set of 1

2SC2275. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 35. Collector current: 1.5A. Ic(pulse): 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.

Equivalent products :

Quantity in stock : 5
2SC2344

2SC2344

Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. C...
2SC2344
Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. Collector current: 1.5A. Ic(pulse): 3A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Function: High-Voltage Switching, AF Power Amplifier. Spec info: complementary transistor (pair) 2SA1011. BE diode: no. CE diode: no
2SC2344
Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. Collector current: 1.5A. Ic(pulse): 3A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Function: High-Voltage Switching, AF Power Amplifier. Spec info: complementary transistor (pair) 2SA1011. BE diode: no. CE diode: no
Set of 1
3.95$ VAT incl.
(3.95$ excl. VAT)
3.95$
Quantity in stock : 6
2SC2238

2SC2238

Semiconductor material: silicon. FT: 100 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): ...
2SC2238
Semiconductor material: silicon. FT: 100 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA968
2SC2238
Semiconductor material: silicon. FT: 100 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA968
Set of 1
1.73$ VAT incl.
(1.73$ excl. VAT)
1.73$

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2SC1815

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2SC2705

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2SA1301

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2SC2344

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Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. C...
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IRFZ44N

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C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
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Quantity in stock : 14
2N5416

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C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Functio...
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2SA1302

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Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
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2SA1015GR

2SA1015GR

Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: audio ampli...
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2SC3281

2SC3281

Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power...
2SC3281
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(2.86$ excl. VAT)
2.86$

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