Quantity | excl. VAT | VAT incl. |
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1 - 4 | 3.95$ | 3.95$ |
5 - 5 | 3.75$ | 3.75$ |
Quantity | U.P | |
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1 - 4 | 3.95$ | 3.95$ |
5 - 5 | 3.75$ | 3.75$ |
2SC2344. Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. Collector current: 1.5A. Ic(pulse): 3A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Function: High-Voltage Switching, AF Power Amplifier. Spec info: complementary transistor (pair) 2SA1011. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 02:25.
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