Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.10$ | 1.10$ |
5 - 5 | 1.05$ | 1.05$ |
Quantity | U.P | |
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1 - 4 | 1.10$ | 1.10$ |
5 - 5 | 1.05$ | 1.05$ |
2SC2236. Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Collector current: 1.5A. Pd (Power Dissipation, Max): 900mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA966. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.
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