Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.43$ | 0.43$ |
10 - 24 | 0.41$ | 0.41$ |
25 - 49 | 0.38$ | 0.38$ |
50 - 99 | 0.36$ | 0.36$ |
100 - 178 | 0.35$ | 0.35$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.43$ | 0.43$ |
10 - 24 | 0.41$ | 0.41$ |
25 - 49 | 0.38$ | 0.38$ |
50 - 99 | 0.36$ | 0.36$ |
100 - 178 | 0.35$ | 0.35$ |
2SC2412. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Collector current: 0.15A. Marking on the case: BQ. Temperature: +155°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 400mV. Collector/emitter voltage Vceo: 50V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code BQ. Spec info: complementary transistor (pair) 2SA1037. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.
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