Transistors

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A8K. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.246W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Darlington transistor?: yes. Semiconductor material: silicon. FT: 55 MHz. Function: pair of complementary transistors. Minimum hFE gain: 5000. Collector current: 10A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Type of transistor: PNP & NPN. Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA42. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA92. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

BE resistor: 10. Cost): 300pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100MHz. Minimum hFE gain: 100. Collector current: 500mA. Ic(pulse): 1A. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 80V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: yes

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA06. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: general purpose. Max hFE gain: 10000. Minimum hFE gain: 5000. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Technology: Darlington transistor. Tf(min): 125 MHz. Type of transistor: NPN. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 30 v. Vebo: 10V. BE diode: no. CE diode: no

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 125 MHz. Function: general purpose. Max hFE gain: 20000. Minimum hFE gain: 10000. Collector current: 500mA. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 30 v. Vebo: 10V. Number of terminals: 3. BE diode: no. CE diode: no

Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 45V. Collector current: 0.2A. Max frequency: 100 MHz. Housing: TO-92. DC Collector/Base Gain hFE min.: 1000. Applications: Audio

Cost): 3pF. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 0.5A. Equivalents: KSP42. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Housing: TO-92. Housing (according to data sheet): TO-92 (ammo pak). Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 500mV. Collector/emitter voltage Vceo: 300V. Vebo: 6V. Quantity per case: 1. Spec info: complementary transistor (pair) MPSA92. BE diode: no. CE diode: no

Cost): 7pF. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Max hFE gain: 50. Minimum hFE gain: 40. Collector current: 0.3A. Equivalents: KSP44, CMPSA44. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92 (ammo pak). Type of transistor: NPN. Vcbo: 500V. Saturation voltage VCE(sat): 400mV. Maximum saturation voltage VCE(sat): 750mV. Collector/emitter voltage Vceo: 400V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 50 MHz. Function: NF-TR. Minimum hFE gain: 100. Collector current: 0.5A. Ic(pulse): 1A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92AMMO. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Spec info: complementary transistor (pair) MPSA06. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA56. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Darlington transistor?: yes. Semiconductor material: silicon. FT: 125 MHz. Max hFE gain: 20000. Minimum hFE gain: 5000. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 30 v. Vebo: 10V. Quantity per case: 2. Number of terminals: 3. BE diode: no. CE diode: no

Conditioning: roll. Semiconductor material: silicon. FT: 50 MHz. Function: High Voltage Transistor. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 2000. Spec info: complementary transistor (pair) MPSA42. BE diode: no. CE diode: no

RoHS: no. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSH10. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 5mA. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Cost): 3pF. Semiconductor material: silicon. FT: 50 MHz. Collector current: 0.5A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: NPN. Collector/emitter voltage Vceo: 300V. Function: hFE 25...40. Quantity per case: 1. Spec info: One Watt High Voltage Transistor. BE diode: no. CE diode: no

Cost): 6pF. FT: 100 MHz. Max hFE gain: 150000. Minimum hFE gain: 25000. Collector current: 1A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Operating temperature: -55...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 50V. Vebo: 12V. Function: High hFE. Quantity per case: 1. BE diode: no. CE diode: no

C(in): 60pF. Cost): 6pF. Semiconductor material: silicon. FT: 50 MHz. Collector current: 1A. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 40V. Collector/emitter voltage Vceo: 50V. Resistor B: PNP transistor. BE resistor: -30V. Quantity per case: 1. BE diode: no. CE diode: no

Type of transistor: NPN transistor. Polarity: NPN. Applications: RF-POWER. Collector-Emitter Voltage VCEO: 28V

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MTP2P50EG. Drain-source voltage Uds [V]: -500V. Drain Current Id [A] @ 25°C: -2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ -1A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 24 ns. Switch-off delay tf[nsec.]: 42 ns. Ciss Gate Capacitance [pF]: 1183pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 410pF. Cost): 114pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 55.7 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 45A. ID (T=100°C): 8A. ID (T=25°C): 12A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 9 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Logic level gated transistor. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: M50P03HDLG. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -50A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms @ -25A. Gate breakdown voltage Ugs [V]: -2V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 117 ns. Ciss Gate Capacitance [pF]: 4900pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AE. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MTW45N10E. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 45A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.027 Ohms @ 22.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 170 ns. Ciss Gate Capacitance [pF]: 5000pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-264. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MTY100N10E. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 100A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.011 Ohms @ 50A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 96 ns. Switch-off delay tf[nsec.]: 372 ns. Ciss Gate Capacitance [pF]: 10640pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C