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PBSS4041NX

PBSS4041NX
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Quantity excl. VAT VAT incl.
1 - 4 1.38$ 1.38$
5 - 9 1.31$ 1.31$
10 - 24 1.25$ 1.25$
25 - 49 1.18$ 1.18$
50 - 99 1.15$ 1.15$
100 - 249 1.12$ 1.12$
250+ 1.07$ 1.07$
Quantity U.P
1 - 4 1.38$ 1.38$
5 - 9 1.31$ 1.31$
10 - 24 1.25$ 1.25$
25 - 49 1.18$ 1.18$
50 - 99 1.15$ 1.15$
100 - 249 1.12$ 1.12$
250+ 1.07$ 1.07$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

PBSS4041NX. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Max hFE gain: 500. Minimum hFE gain: 75. Collector current: 6.2A. Ic(pulse): 15A. Note: complementary transistor (pair) PBSS4041PX. Marking on the case: 6F. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: surface-mounted component (SMD). Tf (type): 220 ns. Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 35mV. Maximum saturation voltage VCE(sat): 320mV. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code 6F. BE diode: no. CE diode: no. Quantity in stock updated on 28/12/2024, 10:25.

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