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Semiconductors Transistors

P50N03LD

P50N03LD
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.50$ 1.50$
5 - 9 1.42$ 1.42$
10 - 24 1.35$ 1.35$
25 - 49 1.27$ 1.27$
50 - 99 1.24$ 1.24$
100 - 249 1.14$ 1.14$
250 - 435 1.08$ 1.08$
Quantity U.P
1 - 4 1.50$ 1.50$
5 - 9 1.42$ 1.42$
10 - 24 1.35$ 1.35$
25 - 49 1.27$ 1.27$
50 - 99 1.24$ 1.24$
100 - 249 1.14$ 1.14$
250 - 435 1.08$ 1.08$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 435
Set of 1

P50N03LD. C(in): 1200pF. Cost): 600pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 150A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss: 25uA. Idss (max): 50A. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 15m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 6 ns. Technology: Field Effect Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 20V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 35
IPD50N03S2L-06

IPD50N03S2L-06

C(in): 1900pF. Cost): 760pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of...
IPD50N03S2L-06
C(in): 1900pF. Cost): 760pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: Logic Level, Enhancement mode. Id(imp): 200A. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. IDss (min): 0.01uA. Marking on the case: PN03L06. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 7.6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Drain-source protection : yes. G-S Protection: no
IPD50N03S2L-06
C(in): 1900pF. Cost): 760pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: Logic Level, Enhancement mode. Id(imp): 200A. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. IDss (min): 0.01uA. Marking on the case: PN03L06. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. On-resistance Rds On: 7.6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.40$ VAT incl.
(2.40$ excl. VAT)
2.40$

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FDD6635

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C(in): 1400pF. Cost): 317pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1....
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FQD30N06L

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VN750PT-E

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SW18002P

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Quantity in stock : 503
IRF540N

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C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. ...
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CFR1-4W-470R

CFR1-4W-470R

Resistance: 470 Ohms. Power: 0.25W. Resistor type: carbon layer. Series: CFR1/4W E12. Tolerance: 5%....
CFR1-4W-470R
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CFR0318JT-V1002

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Resistance: 10k Ohms. Power: 0.25W. Tolerance: 5%. Resistance (R): 10k Ohms. Resistor type: carbon l...
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FQD19N10L

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HUF76121D3S

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C(in): 850pF. Cost): 465pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
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CFR1-4W-1K

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Resistance: 1k Ohms. Power: 0.25W. Resistor type: carbon layer. Note: CFR1/4W E12. Note: 2.5x6.8mm. ...
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