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Semiconductors Transistors

P30N03A

P30N03A
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 5.85$ 5.85$
2 - 2 5.55$ 5.55$
3 - 4 5.26$ 5.26$
5 - 7 4.97$ 4.97$
Quantity U.P
1 - 1 5.85$ 5.85$
2 - 2 5.55$ 5.55$
3 - 4 5.26$ 5.26$
5 - 7 4.97$ 4.97$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 7
Set of 1

P30N03A. C(in): 860pF. Cost): 450pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. ID (T=25°C): 30A. Idss: 0.1uA. Idss (max): 30A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 16 ns. Technology: Field Effect Transistor. Housing: TO-220. Housing (according to data sheet): TO-220AB. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.014 Ohms. G-S Protection: no. Quantity in stock updated on 12/03/2025, 02:25.

Equivalent products :

Quantity in stock : 16
2SK1358

2SK1358

C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Func...
2SK1358
C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, tr--25nS tf--20nS. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 300uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.1 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V
2SK1358
C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, tr--25nS tf--20nS. Id(imp): 27A. ID (T=25°C): 9A. Idss (max): 300uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 1.1 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V
Set of 1
9.09$ VAT incl.
(9.09$ excl. VAT)
9.09$

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Quantity in stock : 45
NJW3281

NJW3281

C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function:...
NJW3281
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NJW3281
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8.04$ VAT incl.
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Quantity in stock : 24
2SD361

2SD361

Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Collector current: 1.5A. Pd (Powe...
2SD361
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2SD361
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0.78$
Quantity in stock : 192
1N5358B

1N5358B

Semiconductor material: silicon. Number of terminals: 2. Pd (Power Dissipation, Max): 5W. RoHS: yes....
1N5358B
[LONGDESCRIPTION]
1N5358B
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0.45$ VAT incl.
(0.45$ excl. VAT)
0.45$
Quantity in stock : 18
2SC3117

2SC3117

Semiconductor material: silicon. FT: 120 MHz. Function: TV-NF/E. Collector current: 1.5A. Pd (Power ...
2SC3117
[LONGDESCRIPTION]
2SC3117
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2.30$ VAT incl.
(2.30$ excl. VAT)
2.30$
Quantity in stock : 88
UC3844N

UC3844N

RoHS: yes. Component family: Analog integrated circuit. Housing: PCB soldering. Housing: DIP8. Housi...
UC3844N
[LONGDESCRIPTION]
UC3844N
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2.33$ VAT incl.
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2.33$
Quantity in stock : 110
IRF530N

IRF530N

C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drai...
IRF530N
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1.73$ VAT incl.
(1.73$ excl. VAT)
1.73$
Quantity in stock : 4
NJW1302

NJW1302

C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: ...
NJW1302
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NJW1302
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8.04$ VAT incl.
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8.04$

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