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Semiconductors Transistors

PMBT4403

PMBT4403
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.14$ 1.14$
2 - 2 1.09$ 1.09$
3 - 4 1.03$ 1.03$
5 - 9 0.97$ 0.97$
10 - 24 0.92$ 0.92$
25 - 49 0.86$ 0.86$
50 - 289 0.74$ 0.74$
Quantity (Set of 10) U.P
1 - 1 1.14$ 1.14$
2 - 2 1.09$ 1.09$
3 - 4 1.03$ 1.03$
5 - 9 0.97$ 0.97$
10 - 24 0.92$ 0.92$
25 - 49 0.86$ 0.86$
50 - 289 0.74$ 0.74$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2887
Set of 10

PMBT4403. Cost): 29pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: High Speed ​​Switching. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Ic(pulse): 800mA. Marking on the case: *T2, P2T, T2T, W2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 350 ns. Tf(min): 40 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: screen printing/SMD code P2T, T2T, W2T, complementary transistor (pair) PMBT4401. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.

Technical documentation

Equivalent products :

Quantity in stock : 1215
MMBT4403LT1G

MMBT4403LT1G

Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. ...
MMBT4403LT1G
Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Marking on the case: 2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no
MMBT4403LT1G
Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Marking on the case: 2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no
Set of 10
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$

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