Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.65$ | 2.65$ |
5 - 9 | 2.52$ | 2.52$ |
10 - 24 | 2.39$ | 2.39$ |
25 - 48 | 2.25$ | 2.25$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.65$ | 2.65$ |
5 - 9 | 2.52$ | 2.52$ |
10 - 24 | 2.39$ | 2.39$ |
25 - 48 | 2.25$ | 2.25$ |
PHB45N03LT. C(in): 920pF. Cost): 260pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: Field effect power transistor. Logic level control. Id(imp): 180A. ID (T=100°C): 30A. ID (T=25°C): 45A. Idss (max): 10uA. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 86W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 78 ns. Td(on): 6 ns. Technology: TrenchMOS transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): SOT-404. Operating temperature: -55...+175°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/12/2024, 10:25.
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