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Semiconductors Transistors

KSP2222A

KSP2222A
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.40$ 1.40$
2 - 2 1.33$ 1.33$
3 - 4 1.26$ 1.26$
5 - 9 1.19$ 1.19$
10 - 24 1.12$ 1.12$
25 - 25 0.95$ 0.95$
Quantity (Set of 10) U.P
1 - 1 1.40$ 1.40$
2 - 2 1.33$ 1.33$
3 - 4 1.26$ 1.26$
5 - 9 1.19$ 1.19$
10 - 24 1.12$ 1.12$
25 - 25 0.95$ 0.95$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 250
Set of 10

KSP2222A. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 600mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 285 ns. Tf(min): 35 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 164
PN2222A

PN2222A

Cost): 75pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: General P...
PN2222A
Cost): 75pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: General Purpose Amplifier. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
PN2222A
Cost): 75pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: General Purpose Amplifier. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.57$ VAT incl.
(1.57$ excl. VAT)
1.57$
Quantity in stock : 352
2N2222A-PL

2N2222A-PL

C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Functio...
2N2222A-PL
C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.8A. Note: complementary transistor (pair) 2N2907A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
2N2222A-PL
C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Max hFE gain: 300. Minimum hFE gain: 35. Collector current: 0.8A. Note: complementary transistor (pair) 2N2907A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.46$ VAT incl.
(1.46$ excl. VAT)
1.46$

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Quantity in stock : 2256
2N2222AG

2N2222AG

Conditioning unit: 5000. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Functio...
2N2222AG
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2N2222AG
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Quantity in stock : 415832
1N4007

1N4007

VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
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Quantity in stock : 539
2N2907A-PL

2N2907A-PL

C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Functio...
2N2907A-PL
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2N2907A-PL
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0.16$ VAT incl.
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2N2222A

2N2222A

RoHS: yes. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Configuration: P...
2N2222A
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2N2222A
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1.47$ VAT incl.
(1.47$ excl. VAT)
1.47$
Quantity in stock : 47909
1N4148

1N4148

Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
1N4148
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1N4148
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0.0164$ VAT incl.
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Quantity in stock : 244
CD4011BE

CD4011BE

Assembly/installation: PCB through-hole mounting. Number of circuits: 4. Logic circuits family: CD4x...
CD4011BE
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CD4011BE
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0.75$ VAT incl.
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0.75$
Quantity in stock : 282
NE555N

NE555N

RoHS: yes. Component family: 'timers' circuits. Housing: PCB soldering. Housing: DIP8. Configuration...
NE555N
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NE555N
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1.96$ VAT incl.
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1.96$
Quantity in stock : 1909
CD4017BE

CD4017BE

Assembly/installation: PCB through-hole mounting. Number of terminals: 16. Type of circuits: CMOS. N...
CD4017BE
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Quantity in stock : 522
MOR2WS-1K

MOR2WS-1K

Resistance: 1k Ohms. Power: 2W. Resistor type: Metal layer. Temperature stability: 300ppm/°C. Note:...
MOR2WS-1K
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MOR2WS-1K
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0.0974$ VAT incl.
(0.0974$ excl. VAT)
0.0974$
Quantity in stock : 84
TDA0161FP

TDA0161FP

Number of terminals: 8. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: ...
TDA0161FP
[LONGDESCRIPTION]
TDA0161FP
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4.82$ VAT incl.
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4.82$

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