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Semiconductors Transistors

KSD2012GTU

KSD2012GTU
Quantity excl. VAT VAT incl.
1 - 4 1.83$ 1.83$
5 - 9 1.74$ 1.74$
10 - 24 1.65$ 1.65$
25 - 49 1.56$ 1.56$
50 - 59 1.52$ 1.52$
Quantity U.P
1 - 4 1.83$ 1.83$
5 - 9 1.74$ 1.74$
10 - 24 1.65$ 1.65$
25 - 49 1.56$ 1.56$
50 - 59 1.52$ 1.52$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 59
Set of 1

KSD2012GTU. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Collector current: 3A. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Housing: TO-220FP. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) KSB1366. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 14:25.

Technical documentation

Equivalent products :

Out of stock
2SD2012

2SD2012

Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Mi...
2SD2012
Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 3A. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) 2SB1366. BE diode: no. CE diode: no
2SD2012
Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 3A. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. Spec info: complementary transistor (pair) 2SB1366. BE diode: no. CE diode: no
Set of 1
1.92$ VAT incl.
(1.92$ excl. VAT)
1.92$

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KUY12

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MJ15016-ONS

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FRN01WK0101A10

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STP55NF06

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