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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 3A, TO-126F, TO-126F, 30 v - KSD882-Y

NPN transistor, 3A, TO-126F, TO-126F, 30 v - KSD882-Y
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.37$ 0.37$
10 - 24 0.35$ 0.35$
25 - 49 0.34$ 0.34$
50 - 52 0.34$ 0.34$
Quantity U.P
1 - 9 0.37$ 0.37$
10 - 24 0.35$ 0.35$
25 - 49 0.34$ 0.34$
50 - 52 0.34$ 0.34$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 52
Set of 1

NPN transistor, 3A, TO-126F, TO-126F, 30 v - KSD882-Y. NPN transistor, 3A, TO-126F, TO-126F, 30 v. Collector current: 3A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 30 v. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Pd (Power Dissipation, Max): 10W. Spec info: SD882-Y. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Original product from manufacturer Fairchild. Quantity in stock updated on 21/05/2025, 12:25.

Equivalent products :

Quantity in stock : 144
2SD882

2SD882

NPN transistor, 3A, TO-126 (TO-225, SOT-32), TO-126, 30 v. Collector current: 3A. Housing: TO-126 (T...
2SD882
NPN transistor, 3A, TO-126 (TO-225, SOT-32), TO-126, 30 v. Collector current: 3A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 45pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. Minimum hFE gain: 60. Ic(pulse): 7A. Marking on the case: D882. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Spec info: complementary transistor (pair) 2SB772. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V
2SD882
NPN transistor, 3A, TO-126 (TO-225, SOT-32), TO-126, 30 v. Collector current: 3A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 45pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. Minimum hFE gain: 60. Ic(pulse): 7A. Marking on the case: D882. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Spec info: complementary transistor (pair) 2SB772. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V
Set of 1
0.95$ VAT incl.
(0.95$ excl. VAT)
0.95$

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