PNP bipolar transistors

NPN-Transistor, PCB soldering, D8/C, 35V, 50mA. Housing: PCB soldering. Housing: D8/C. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W

NPN-Transistor, PCB soldering, D17/C, 60V/50V, 1A. Housing: PCB soldering. Housing: D17/C. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.9W

NPN-Transistor, 3A, TO-126 (TO-225, SOT-32), TO-126, 40V. Collector current: 3A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Pd (Power Dissipation, Max): 10W. Spec info: complementary transistor (pair) 2SD882. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 12A, TO-3PN, 160V. Collector current: 12A. Housing: TO-3PN. Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Pd (Power Dissipation, Max): 100W. Spec info: complementary transistor (pair) 2SD1047. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 4A, TO-220, TO-220, 50V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 50V. Resistor B: 10. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) 2SD1133. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 70V

NPN-Transistor, 2A, TO-220, TO-220AB, 150V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Resistor B: 10. BE diode: no. BE resistor: 47. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: PNP transistor. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Spec info: complementary transistor (pair) 2SD1138. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 200V. Saturation voltage VCE(sat): 3V

NPN-Transistor, PCB soldering, D17/C, 80V/50V, 1.5A. Housing: PCB soldering. Housing: D17/C. Collector-emitter voltage Uceo [V]: 80V/50V. Collector current Ic [A], max.: 1.5A. RoHS: no. Component family: PNP Darlington Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.9W

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 50V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 50V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 560. Minimum hFE gain: 100. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) 2SD1207. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V

NPN-Transistor, PCB soldering, TO-92, 45V/40V, 300mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 45V/40V. Collector current Ic [A], max.: 300mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.5W

NPN-Transistor, PCB soldering, TO-126, 80V, 1A. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: A743. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor. Quantity per case: 1

NPN-Transistor. Quantity per case: 1. Spec info: substitute

NPN-Transistor. Quantity per case: 1

NPN-Transistor, 20mA, SOT-39, SOT-39, 13V. Collector current: 20mA. Housing: SOT-39. Housing (according to data sheet): SOT-39. Collector/emitter voltage Vceo: 13V. Quantity per case: 1. Semiconductor material: GE. FT: 1250 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 0.1W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 20V. Vebo: 0.3V

NPN-Transistor, PCB soldering, TO-126, 32V, 2A. Housing: PCB soldering. Housing: TO-126. Collector-emitter voltage Uceo [V]: 32V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: B891F. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Resistor B: no. BE diode: no. BE resistor: PCB soldering. C(in): 180pF. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: 1A. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): +175°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Spec info: complementary transistor (pair) BC141. Assembly/installation: PCB through-hole mounting. Technology: EPITAXIAL TRANSISTORS. Tf(max): 650 ns. Tf(min): 500 ns. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 0.1A, 45V. Collector current: 0.1A. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 120. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN-Transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 45V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 460. Minimum hFE gain: 180. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -60...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN-Transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 50V, 100mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC212BG. Cutoff frequency ft [MHz]: 280 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.2A, 45V. Collector current: 0.2A. Collector/emitter voltage Vceo: 45V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP

NPN-Transistor, 0.2A, TO-92, TO-92, 30 v. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 45V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, 0.1A, 20V. Collector current: 0.1A. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-18, 25V, 100mA. Housing: PCB soldering. Housing: TO-18. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 1W

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Type of transistor: PNP. Vcbo: 85V. Saturation voltage VCE(sat): 0.65V. Vebo: 7V