PNP bipolar transistors

NPN-Transistor, 3A, TO-220, TO-220, 115V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 115V. BE diode: no. Cost): 160pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production date: 201448. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) TIP31C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, TO-247, 10A, TO-247, 140V. Housing: TO-247. Collector current: 10A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 140V. RoHS: yes. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 100. Minimum hFE gain: 20. Ic(pulse): 15A. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) TIP33C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 140V. Saturation voltage VCE(sat): 1V

NPN-Transistor, TO-247, 25A, TO-247, 100V. Housing: TO-247. Collector current: 25A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. RoHS: yes. Minimum hFE gain: 25. Ic(pulse): 50A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) TIP35C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Vebo: 5V. BE diode: no. Cost): 45pF. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Production date: 1512. Max hFE gain: 50

NPN-Transistor, PCB soldering, TO-247, 100V, 25A. Housing: PCB soldering. Housing: TO-247. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 25A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP36CG. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, TO-220, 6A, TO-220, 100V. Housing: TO-220. Collector current: 6A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 75. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: complementary transistor (pair) TIP41C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, -100V, -6A, TO-220. Collector-Emitter Voltage VCEO: -100V. Collector current: -6A. Housing: TO-220. Type of transistor: Power Transistor. Polarity: PNP. Power: 65W. Max frequency: 3MHz

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: 0.2W. Spec info: screen printing/SMD code 6B. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 180pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: 0.2W. Spec info: screen printing/SMD code 6D. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. Function: 1.6mm. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 100nA (ICBO), SO, SM-8. Collector current: 100nA (ICBO). Housing: SO. Housing (according to data sheet): SM-8. Quantity per case: 2. Voltage: 60V. Max hFE gain: 100 (500mA, 2V). Number of terminals: 8. Max: 140 MHz. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 2.75W. Type of transistor: PNP & PNP. Operating temperature: -55°C ~ 150°C. Saturation voltage VCE(sat): 500mV (200mA, 2A)

NPN-Transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) ZTX451. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: PNP. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V

NPN-Transistor, 2A, TO-92, TO-92, 100V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 100V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Very low saturation VBE(sat) 0.9V. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) ZTX653. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 600 ns. Tf(min): 40 ns. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.17V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 400V, 0.5A. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 0.5A. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: ZTX758. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C

NPN-Transistor, 2A, TO-92, TO-92, 40V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.9V. Max hFE gain: 800. Minimum hFE gain: 150. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Spec info: complementary transistor (pair) ZTX690. Assembly/installation: PCB through-hole mounting. Tf(max): 600 ns. Tf(min): 35us. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, 2A, TO-92, TO-92, 70V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.95V. Max hFE gain: 800. Minimum hFE gain: 300. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 750 ns. Tf(min): 35us. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.45V. Vebo: 5V