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Semiconductors Transistors
PNP bipolar transistors

PNP bipolar transistors

510 products available
Products per page :
1...567 89...21
Quantity in stock : 32
2SB1587

2SB1587

NPN-Transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (...
2SB1587
NPN-Transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 65 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) 2SD2438. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
2SB1587
NPN-Transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 65 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) 2SD2438. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
Set of 1
3.58$ VAT incl.
(3.58$ excl. VAT)
3.58$
Quantity in stock : 34
2SB1588

2SB1588

NPN-Transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 10A. Housing: TO-3PF...
2SB1588
NPN-Transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) 2SD2439. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
2SB1588
NPN-Transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) 2SD2439. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
Set of 1
2.97$ VAT incl.
(2.97$ excl. VAT)
2.97$
Out of stock
2SB1624

2SB1624

NPN-Transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3P ( SOT-93 ), 110V. Collector current: 6A. Housing:...
2SB1624
NPN-Transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3P ( SOT-93 ), 110V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( SOT-93 ). Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: NF-L. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
2SB1624
NPN-Transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3P ( SOT-93 ), 110V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( SOT-93 ). Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: NF-L. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
Set of 1
4.87$ VAT incl.
(4.87$ excl. VAT)
4.87$
Quantity in stock : 8
2SB1626

2SB1626

NPN-Transistor, 6A, 110V. Collector current: 6A. Collector/emitter voltage Vceo: 110V. Darlington tr...
2SB1626
NPN-Transistor, 6A, 110V. Collector current: 6A. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Note: >5000. Pd (Power Dissipation, Max): 30W. Spec info: complementary transistor (pair) 2SD2495. Type of transistor: PNP
2SB1626
NPN-Transistor, 6A, 110V. Collector current: 6A. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Note: >5000. Pd (Power Dissipation, Max): 30W. Spec info: complementary transistor (pair) 2SD2495. Type of transistor: PNP
Set of 1
2.55$ VAT incl.
(2.55$ excl. VAT)
2.55$
Quantity in stock : 3
2SB1647

2SB1647

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 15A. Housing: TO-3P ( ...
2SB1647
NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Function: HI-FI Audio Power amplifier and Regulator. Pd (Power Dissipation, Max): 130W. Spec info: complementary transistor (pair) 2SD2560. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
2SB1647
NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Function: HI-FI Audio Power amplifier and Regulator. Pd (Power Dissipation, Max): 130W. Spec info: complementary transistor (pair) 2SD2560. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP
Set of 1
17.78$ VAT incl.
(17.78$ excl. VAT)
17.78$
Out of stock
2SB1659

2SB1659

NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (ac...
2SB1659
NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Collector/emitter voltage Vceo: 110V. BE diode: no. Cost): 100pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) 2SD2589. Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V
2SB1659
NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Collector/emitter voltage Vceo: 110V. BE diode: no. Cost): 100pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) 2SD2589. Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V
Set of 1
8.18$ VAT incl.
(8.18$ excl. VAT)
8.18$
Out of stock
2SB175

2SB175

NPN-Transistor, PCB soldering, TO-1, 30 v, 100mA. Housing: PCB soldering. Housing: TO-1. Collector-e...
2SB175
NPN-Transistor, PCB soldering, TO-1, 30 v, 100mA. Housing: PCB soldering. Housing: TO-1. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.125W
2SB175
NPN-Transistor, PCB soldering, TO-1, 30 v, 100mA. Housing: PCB soldering. Housing: TO-1. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.125W
Set of 1
0.62$ VAT incl.
(0.62$ excl. VAT)
0.62$
Out of stock
2SB185

2SB185

NPN-Transistor, 0.15A, 25V. Collector current: 0.15A. Collector/emitter voltage Vceo: 25V. Quantity ...
2SB185
NPN-Transistor, 0.15A, 25V. Collector current: 0.15A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: GE. Note: >30. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP
2SB185
NPN-Transistor, 0.15A, 25V. Collector current: 0.15A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: GE. Note: >30. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP
Set of 1
1.43$ VAT incl.
(1.43$ excl. VAT)
1.43$
Quantity in stock : 4
2SB511

2SB511

NPN-Transistor, PCB soldering, TO-220AB, 35V, 1.5A. Housing: PCB soldering. Housing: TO-220AB. Colle...
2SB511
NPN-Transistor, PCB soldering, TO-220AB, 35V, 1.5A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 1.5A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W
2SB511
NPN-Transistor, PCB soldering, TO-220AB, 35V, 1.5A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 1.5A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$
Quantity in stock : 8
2SB511A

2SB511A

NPN-Transistor, 1.5A, 35V. Collector current: 1.5A. Collector/emitter voltage Vceo: 35V. Quantity pe...
2SB511A
NPN-Transistor, 1.5A, 35V. Collector current: 1.5A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP
2SB511A
NPN-Transistor, 1.5A, 35V. Collector current: 1.5A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Pd (Power Dissipation, Max): 10W. Type of transistor: PNP
Set of 1
1.78$ VAT incl.
(1.78$ excl. VAT)
1.78$
Quantity in stock : 2
2SB514

2SB514

NPN-Transistor, PCB soldering, TO-220AB, 50V, 2A. Housing: PCB soldering. Housing: TO-220AB. Collect...
2SB514
NPN-Transistor, PCB soldering, TO-220AB, 50V, 2A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 20W
2SB514
NPN-Transistor, PCB soldering, TO-220AB, 50V, 2A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 20W
Set of 1
1.15$ VAT incl.
(1.15$ excl. VAT)
1.15$
Quantity in stock : 2
2SB526

2SB526

NPN-Transistor, PCB soldering, M17/J, 90V/80V, 800mA. Housing: PCB soldering. Housing: M17/J. Collec...
2SB526
NPN-Transistor, PCB soldering, M17/J, 90V/80V, 800mA. Housing: PCB soldering. Housing: M17/J. Collector-emitter voltage Uceo [V]: 90V/80V. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W
2SB526
NPN-Transistor, PCB soldering, M17/J, 90V/80V, 800mA. Housing: PCB soldering. Housing: M17/J. Collector-emitter voltage Uceo [V]: 90V/80V. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W
Set of 1
2.35$ VAT incl.
(2.35$ excl. VAT)
2.35$
Out of stock
2SB529

2SB529

NPN-Transistor, PCB soldering, M17/J, 40V/20V, 2A. Housing: PCB soldering. Housing: M17/J. Collector...
2SB529
NPN-Transistor, PCB soldering, M17/J, 40V/20V, 2A. Housing: PCB soldering. Housing: M17/J. Collector-emitter voltage Uceo [V]: 40V/20V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W
2SB529
NPN-Transistor, PCB soldering, M17/J, 40V/20V, 2A. Housing: PCB soldering. Housing: M17/J. Collector-emitter voltage Uceo [V]: 40V/20V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W
Set of 1
1.00$ VAT incl.
(1.00$ excl. VAT)
1.00$
Quantity in stock : 20
2SB542

2SB542

NPN-Transistor, PCB soldering, TO-92, 20V/15V, 500mA. Housing: PCB soldering. Housing: TO-92. Collec...
2SB542
NPN-Transistor, PCB soldering, TO-92, 20V/15V, 500mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 20V/15V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W
2SB542
NPN-Transistor, PCB soldering, TO-92, 20V/15V, 500mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 20V/15V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.3W
Set of 1
1.79$ VAT incl.
(1.79$ excl. VAT)
1.79$
Quantity in stock : 6
2SB544

2SB544

NPN-Transistor, PCB soldering, D17/C, 25V, 1A. Housing: PCB soldering. Housing: D17/C. Collector-emi...
2SB544
NPN-Transistor, PCB soldering, D17/C, 25V, 1A. Housing: PCB soldering. Housing: D17/C. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.9W
2SB544
NPN-Transistor, PCB soldering, D17/C, 25V, 1A. Housing: PCB soldering. Housing: D17/C. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 1A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.9W
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 616
2SB562C

2SB562C

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V. Collector current: 1A. Housing: TO-92. Housing (acco...
2SB562C
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: hFE 120...240. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SD468. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 25V
2SB562C
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: hFE 120...240. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SD468. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 25V
Set of 1
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$
Quantity in stock : 4
2SB642

2SB642

NPN-Transistor, 0.1A, SC-71, 60V. Collector current: 0.1A. Housing: SC-71. Collector/emitter voltage...
2SB642
NPN-Transistor, 0.1A, SC-71, 60V. Collector current: 0.1A. Housing: SC-71. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP
2SB642
NPN-Transistor, 0.1A, SC-71, 60V. Collector current: 0.1A. Housing: SC-71. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP
Set of 1
0.33$ VAT incl.
(0.33$ excl. VAT)
0.33$
Quantity in stock : 13
2SB643

2SB643

NPN-Transistor, PCB soldering, D8/C, 30V/25V, 500mA. Housing: PCB soldering. Housing: D8/C. Collecto...
2SB643
NPN-Transistor, PCB soldering, D8/C, 30V/25V, 500mA. Housing: PCB soldering. Housing: D8/C. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.6W
2SB643
NPN-Transistor, PCB soldering, D8/C, 30V/25V, 500mA. Housing: PCB soldering. Housing: D8/C. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.6W
Set of 1
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$
Quantity in stock : 81
2SB647

2SB647

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 80V. Collector current: 1A. Housing: TO-92. Housing (acco...
2SB647
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Spec info: complementary transistor (pair) 2SD667. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V
2SB647
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 200. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: B647. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Spec info: complementary transistor (pair) 2SD667. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
1.59$ VAT incl.
(1.59$ excl. VAT)
1.59$
Quantity in stock : 134
2SB647-SMD

2SB647-SMD

NPN-Transistor, 1A, SOT-89, SOT-89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according ...
2SB647-SMD
NPN-Transistor, 1A, SOT-89, SOT-89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 60. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Saturation voltage VCE(sat): 1V. Vebo: 5V
2SB647-SMD
NPN-Transistor, 1A, SOT-89, SOT-89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 60. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
1.10$ VAT incl.
(1.10$ excl. VAT)
1.10$
Quantity in stock : 114
2SB649A

2SB649A

NPN-Transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 160V. Collector current: 1.5A. Housing: TO-12...
2SB649A
NPN-Transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 160V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 27pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) 2SD669A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V
2SB649A
NPN-Transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 160V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 27pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) 2SD669A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
1.58$ VAT incl.
(1.58$ excl. VAT)
1.58$
Quantity in stock : 23
2SB688

2SB688

NPN-Transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 8A. Housing: TO-3PN ( 2-16C...
2SB688
NPN-Transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 8A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 160. Minimum hFE gain: 55. Marking on the case: B668. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) 2SD718. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V
2SB688
NPN-Transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 8A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 160. Minimum hFE gain: 55. Marking on the case: B668. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) 2SD718. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V
Set of 1
2.49$ VAT incl.
(2.49$ excl. VAT)
2.49$
Quantity in stock : 2
2SB695

2SB695

NPN-Transistor, 7A, 170V. Collector current: 7A. Collector/emitter voltage Vceo: 170V. Quantity per ...
2SB695
NPN-Transistor, 7A, 170V. Collector current: 7A. Collector/emitter voltage Vceo: 170V. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP
2SB695
NPN-Transistor, 7A, 170V. Collector current: 7A. Collector/emitter voltage Vceo: 170V. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP
Set of 1
10.96$ VAT incl.
(10.96$ excl. VAT)
10.96$
Quantity in stock : 1
2SB707

2SB707

NPN-Transistor, PCB soldering, TO-220AB, 80V/60V, 7A. Housing: PCB soldering. Housing: TO-220AB. Col...
2SB707
NPN-Transistor, PCB soldering, TO-220AB, 80V/60V, 7A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 80V/60V. Collector current Ic [A], max.: 7A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 40W
2SB707
NPN-Transistor, PCB soldering, TO-220AB, 80V/60V, 7A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 80V/60V. Collector current Ic [A], max.: 7A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 40W
Set of 1
3.97$ VAT incl.
(3.97$ excl. VAT)
3.97$
Quantity in stock : 18
2SB709

2SB709

NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), MINI MOLD, 25V. Collector current: 0.1A. Housing: SOT-23 ( ...
2SB709
NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), MINI MOLD, 25V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): MINI MOLD. Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 2.7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain: 460. Minimum hFE gain: 160. Ic(pulse): 0.2A. Marking on the case: AQ. RoHS: no. Spec info: complementary transistor (pair) 2SD601. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V
2SB709
NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), MINI MOLD, 25V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): MINI MOLD. Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 2.7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain: 460. Minimum hFE gain: 160. Ic(pulse): 0.2A. Marking on the case: AQ. RoHS: no. Spec info: complementary transistor (pair) 2SD601. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V
Set of 1
0.82$ VAT incl.
(0.82$ excl. VAT)
0.82$
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