Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.31$ | 1.31$ |
2 - 2 | 1.25$ | 1.25$ |
3 - 4 | 1.18$ | 1.18$ |
5 - 9 | 1.16$ | 1.16$ |
10 - 24 | 1.12$ | 1.12$ |
25 - 48 | 0.95$ | 0.95$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.31$ | 1.31$ |
2 - 2 | 1.25$ | 1.25$ |
3 - 4 | 1.18$ | 1.18$ |
5 - 9 | 1.16$ | 1.16$ |
10 - 24 | 1.12$ | 1.12$ |
25 - 48 | 0.95$ | 0.95$ |
NPN-Transistor, 100mA, TO-92, TO-92, 50V - BC212B. NPN-Transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. Quantity in stock updated on 07/06/2025, 06:25.
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