PNP bipolar transistors

NPN-Transistor, 5A, TO-3 ( TO-204 ), TO-3, 100V. Collector current: 5A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: GE. FT: 8 MHz. Function: S-L. Max hFE gain: 140. Minimum hFE gain: 60. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V

NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 40V. Collector current: 0.6A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Tf(max): 200 ns. Tf(min): 175 ns. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V

NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.6A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-39, TO-39, 60V, 600mA. Housing: PCB soldering. Housing: TO-39. Housing (JEDEC standard): TO-39. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 600mA. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2905A. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.6W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: PNP transistor

NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.6A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: amplifier, switching transistor. Max hFE gain: 300. Minimum hFE gain: 75. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V

NPN-Transistor, 0.6A, 40V. Collector current: 0.6A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Note: >40. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP. Vcbo: 60V

NPN-Transistor, PCB soldering, TO-18, TO-18, 60V, 600mA, TO-18 ( TO-206 ), TO-18, 60V. Housing: PCB soldering. Housing: TO-18. Housing (JEDEC standard): TO-18. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 600mA. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 60V. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2907A. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.4W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: PNP transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 400mW. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 30 ns. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: VHF Amplifier

NPN-Transistor, 0.6A, TO-92, TO-92Ammo-Pack, 60V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 60V. C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Hfe 100. Max hFE gain: 300. Minimum hFE gain: 75. Ic(pulse): 0.8A. Pd (Power Dissipation, Max): 0.4W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. BE diode: no. CE diode: no

NPN-Transistor, 0.5A, 25V. Collector current: 0.5A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. Function: NF-S. Pd (Power Dissipation, Max): 0.3W. Type of transistor: PNP

NPN-Transistor, TO-92, 100mA, TO-92Ammo-Pack, 40V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 40V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: Si-Epitaxial PlanarTransistor. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 40V, 200mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3906. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 1A, TO-39 ( TO-205 ), TO-39 ( TO-5 ), 80V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39 ( TO-5 ). Collector/emitter voltage Vceo: 80V. Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150...500 MHz. Function: S. Max hFE gain: 300. Minimum hFE gain: 75. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 100 ns. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.15V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, TO-92, 0.6A, TO-92Ammo Pack, 40V. Housing: TO-92. Collector current: 0.6A. Housing (according to data sheet): TO-92Ammo Pack. Collector/emitter voltage Vceo: 40V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, 0.6A, TO-92, TO-92, 40V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. C(in): 30pF. Cost): 8.5pF. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, -50V, -50mA, TO-92. Collector-Emitter Voltage VCEO: -50V. Collector current: -50mA. Housing: TO-92. Type of transistor: PNP transistor. Polarity: PNP. Max frequency: 40 MHz. Applications: Audio

NPN-Transistor, 50mA, TO-92, TO-92, 50V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 800. Minimum hFE gain: 250. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 3V. Function: preamplifier. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 160V, 600mA, TO-92, 150V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5401. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V. Spec info: 2N5401

NPN-Transistor, 1A, TO-39 ( TO-205 ), TO-39, 200V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 200V. C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Max hFE gain: 150. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +200°C. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 200V. Saturation voltage VCE(sat): 2.5V. Vebo: 4 v. BE diode: no. CE diode: no

NPN-Transistor, 1A, TO-39 ( TO-205 ), TO-39, 300V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 300V. C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching and Linear amplifier. Max hFE gain: 120. Minimum hFE gain: 30. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 2V. Vebo: 6V. BE diode: no. CE diode: no

NPN-Transistor, 25A, TO-3 ( TO-204 ), TO-3, 80V. Collector current: 25A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 100. Minimum hFE gain: 20. Ic(pulse): 50A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.8us. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2N5886

NPN-Transistor, 7A, 60V. Collector current: 7A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Note: hFE 20. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Vcbo: 50V. Spec info: TO-220AB

NPN-Transistor, 2A, 225V. Collector current: 2A. Collector/emitter voltage Vceo: 225V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 35W. Type of transistor: PNP. Vcbo: 275V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 100V, 20A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 20A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N6287G. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN-Transistor, 4A, TO-66, TO-66, 120V. Collector current: 4A. Housing: TO-66. Housing (according to data sheet): TO-66. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 15. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 130V. Saturation voltage VCE(sat): 1.2V. Vebo: 5V

NPN-Transistor, 15A, TO-220, TO-220, 80V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Max hFE gain: 150. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 90V. Saturation voltage VCE(sat): 1.3V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6488