PNP bipolar transistors

NPN-Transistor, 3A, TO-220FP, SC-67, 50V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): SC-67. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-E-L. Max hFE gain: 320. Minimum hFE gain: 60. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 8A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 50V. Collector current: 8A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 95pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: High-Current switching, low-sat. Id(imp): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) 2SD1804. Assembly/installation: PCB through-hole mounting. Tf (type): 20 ns. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V

NPN-Transistor, 5A, 25V. Collector current: 5A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 320 MHz. Function: Strobe High-Current switching. Note: hFE 140...280. Pd (Power Dissipation, Max): 10W. Spec info: TO-251 (I-Pak). Type of transistor: PNP

NPN-Transistor, 3A, 110V. Collector current: 3A. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Note: =4000. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP

NPN-Transistor, 1A, TO-251 ( I-Pak ), ATV, 32V. Collector current: 1A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Collector/emitter voltage Vceo: 32V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Ic(pulse): 2A. Marking on the case: TU2. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V

NPN-Transistor, 2A, 40V. Collector current: 2A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Note: hFE 180...390. Pd (Power Dissipation, Max): 1W. Spec info: 2SB1240R. Type of transistor: PNP

NPN-Transistor, 3A, TO-251 ( I-Pak ), ATV, 50V. Collector current: 3A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Ic(pulse): 4.5A. Marking on the case: B1243 (RN). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial planar type'. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 3A, TO-220FP, TO-220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low-Frequency Power Amplifier. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) 2SD1913. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 3A, 100V. Collector current: 3A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Note: >2000. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP

NPN-Transistor, 6A, 120V. Collector current: 6A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: insulated package transistor. Note: =10000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP

NPN-Transistor, 4A, TO-220FP, TO-220F, 80V. Collector current: 4A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Max hFE gain: 10000. Minimum hFE gain: 1000. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: complementary transistor (pair) 2SD1933. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Vebo: 7V

NPN-Transistor, 3A, TO-220FP, TO-220F, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SD1913. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 8A, TO-264 ( TOP-3L ), TOP-3L, 160V. Collector current: 8A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Type of transistor: PNP. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN-Transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Max hFE gain: 5000. Pd (Power Dissipation, Max): 100W. Spec info: complementary transistor (pair) 2SD2390. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 160V

NPN-Transistor, 10A, TO-3PN ( 2-16C1B ), TO-3PN ( MT-100 ), 150V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN ( MT-100 ). Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Darlington transistor?: 1. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Ic(pulse): A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Spec info: complementary transistor (pair) 2SD2390. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN-Transistor, 3A, TO-220FP, TO-220F, 80V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: NF-L. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SD2394. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 12A, 150V. Collector current: 12A. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) 2SD2401. Type of transistor: PNP. Vcbo: 160V

NPN-Transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 65 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) 2SD2438. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) 2SD2439. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3P ( SOT-93 ), 110V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( SOT-93 ). Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: NF-L. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 6A, 110V. Collector current: 6A. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Note: >5000. Pd (Power Dissipation, Max): 30W. Spec info: complementary transistor (pair) 2SD2495. Type of transistor: PNP

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Function: HI-FI Audio Power amplifier and Regulator. Pd (Power Dissipation, Max): 130W. Spec info: complementary transistor (pair) 2SD2560. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Collector/emitter voltage Vceo: 110V. BE diode: no. Cost): 100pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) 2SD2589. Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN-Transistor, 0.15A, 25V. Collector current: 0.15A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: GE. Note: >30. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220AB, 35V, 1.5A. Housing: PCB soldering. Housing: TO-220AB. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 1.5A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 10W