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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, TO-92, 0.8A, TO-92 ( Ammo Pack ), 30 v - BC328-25

NPN-Transistor, TO-92, 0.8A, TO-92 ( Ammo Pack ), 30 v - BC328-25
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.46$ 0.46$
5 - 9 0.44$ 0.44$
10 - 24 0.42$ 0.42$
25 - 49 0.40$ 0.40$
50 - 99 0.37$ 0.37$
100 - 102 0.43$ 0.43$
Quantity (Set of 10) U.P
1 - 4 0.46$ 0.46$
5 - 9 0.44$ 0.44$
10 - 24 0.42$ 0.42$
25 - 49 0.40$ 0.40$
50 - 99 0.37$ 0.37$
100 - 102 0.43$ 0.43$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1012
Set of 10

NPN-Transistor, TO-92, 0.8A, TO-92 ( Ammo Pack ), 30 v - BC328-25. NPN-Transistor, TO-92, 0.8A, TO-92 ( Ammo Pack ), 30 v. Housing: TO-92. Collector current: 0.8A. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. Resistor B: PNP transistor. BE resistor: -30V. C(in): -0.8A. Cost): 0.63W. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 29/04/2025, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 318
BC327-25

BC327-25

NPN-Transistor, 0.8A, TO-92, TO-92, 50V. Collector current: 0.8A. Housing: TO-92. Housing (according...
BC327-25
NPN-Transistor, 0.8A, TO-92, TO-92, 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC337-25. BE diode: no. CE diode: no
BC327-25
NPN-Transistor, 0.8A, TO-92, TO-92, 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BC337-25. BE diode: no. CE diode: no
Set of 10
0.83$ VAT incl.
(0.83$ excl. VAT)
0.83$

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