PNP bipolar transistors

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 45V, 100mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC557C. Cutoff frequency ft [MHz]: 320 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 100mA, TO-92, TO-92, 30 v. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Switching, and AF Amplifier. Max hFE gain: 450. Minimum hFE gain: 200. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.08V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 30 v, 200mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: C559A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.1A, TO-92, TO-92 ( Ammo Pack ), 30 v. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP

NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: hFE 200...450. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC550B. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 100mA, TO-92, TO-92, 45V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 380. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC550C. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, TO-92, 100mA, TO-92, 45V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Resistor B: yes. BE diode: PNP transistor. BE resistor: PCB soldering. C(in): TO-92. Cost): TO-226AA. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 100. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) BC550C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. C(in): 110pF. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Production date: 1997.04. Max hFE gain: 250. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BC639. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 80V, 500mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC640-16. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. BE diode: no. C(in): 110pF. Cost): 9pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 800mW. Spec info: complementary transistor (pair) BC639-16. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226, 80V, 1A. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC640. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Marking on the case: 5B. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Spec info: screen printing/SMD code 5B. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 5B. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 5B1. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.5A, SOT-23 ( TO-236 ), SOT23 ( TO236 ), 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT23 ( TO236 ). Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80MHz. Function: NF-TR. Max hFE gain: 600. Minimum hFE gain: 250. Ic(pulse): 1A. Marking on the case: 5C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code 5C. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Maximum saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 5C. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 5C. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 30 v, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 5G. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 65V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 125. Ic(pulse): 200mA. Marking on the case: 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code 3A. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 65V. BE diode: no. Cost): 4.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 475. Minimum hFE gain: 220. Ic(pulse): 200mA. Marking on the case: 3B. Equivalents: ON Semiconductor BC856BLT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: screen printing/SMD code 3B. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.065V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 65V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 65V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SC-70, SOT-323, 65V, 100mA. Housing: PCB soldering (SMD). Housing: SC-70. Housing (JEDEC standard): SOT-323. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 250. Minimum hFE gain: 125. Ic(pulse): 200mA. Marking on the case: 3E. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: SMD 3E. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: °C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V