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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 45V - BC304

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 45V - BC304
Quantity excl. VAT VAT incl.
1 - 4 1.07$ 1.07$
5 - 9 1.01$ 1.01$
10 - 24 0.98$ 0.98$
25 - 49 0.96$ 0.96$
50 - 88 0.94$ 0.94$
Quantity U.P
1 - 4 1.07$ 1.07$
5 - 9 1.01$ 1.01$
10 - 24 0.98$ 0.98$
25 - 49 0.96$ 0.96$
50 - 88 0.94$ 0.94$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 88
Set of 1

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 45V - BC304. NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 45V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 240. Minimum hFE gain: 40. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.65V. Vebo: 7V. Original product from manufacturer Tungsram. Quantity in stock updated on 25/07/2025, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 63
BC303

BC303

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205...
BC303
NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Type of transistor: PNP. Vcbo: 85V. Saturation voltage VCE(sat): 0.65V. Vebo: 7V
BC303
NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Type of transistor: PNP. Vcbo: 85V. Saturation voltage VCE(sat): 0.65V. Vebo: 7V
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$

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