NPN bipolar transistors

NPN transistor, 5A, TO-3PN ( 2-16C1B ), TO-3PN, 800V. Collector current: 5A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 120W. Spec info: fr--IC=1A; VCE=10V, 3MHz. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, M31/J, 3A. Housing: PCB soldering. Housing: M31/J. Collector current Ic [A], max.: 3A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1.5 kV. Maximum dissipation Ptot [W]: 50W

NPN transistor, 7A, 600V. Collector current: 7A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, TO-3P ( TO-218 SOT-93 ), 1500V. Collector current: 5A. Housing: TO-3P ( TO-218 SOT-93 ). Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Max hFE gain: 15. Minimum hFE gain: 4. Ic(pulse): 17A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2V. Vebo: 6V

NPN transistor, 3A, TO-220FP, 60V. Collector current: 3A. Housing: TO-220FP. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 4A, 80V. Collector current: 4A. Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: insulated package transistor. Minimum hFE gain: 3000. Note: =3000. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: complementary transistor (pair) 2SB1342. Type of transistor: NPN

NPN transistor, 10A, 110V. Collector current: 10A. Collector/emitter voltage Vceo: 110V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN

NPN transistor, 8A, TO-264 ( TOP-3L ), TOP-3L, 160V. Collector current: 8A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P ( MT-100 ), 150V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( MT-100 ). Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Minimum hFE gain: 5000. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Spec info: complementary transistor (pair) 2SB1560. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN transistor, 2A, SOT-89, SOT-89, 60V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Function: S Io-sat. Note: screen printing/SMD code DT. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) 2SB1561. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, 3A, TO-220FP, TO-220FN, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 55pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 2000. Minimum hFE gain: 1000. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Vebo: 6V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) 2SB1588. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 6A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 40 Ohms. Cost): 95pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V

NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: TO-220. Max hFE gain: 12000. Minimum hFE gain: 5000. Marking on the case: D2589. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) 2SB1659. Assembly/installation: PCB through-hole mounting. Tf(max): 1.1us. Tf(min): 1.1us. Type of transistor: NPN. Vcbo: 110V. Saturation voltage VCE(sat): 2.5V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 22W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 1A, TO-126 (TO-225, SOT-32), TO-126, 120V. Collector current: 1A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low-Frequency Power Amplifier. Max hFE gain: 320. Minimum hFE gain: 20. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 8W. Spec info: complementary transistor (pair) 2SB631K. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 100 ns. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V

NPN transistor, 4A, 100V. Collector current: 4A. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Pd (Power Dissipation, Max): 30W. Spec info: complementary transistor (pair) 2SB682. Type of transistor: NPN

NPN transistor, 8A, TO-3P ( TO-218 SOT-93 ), TO-3P, 120V. Collector current: 8A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: audio power amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) 2SB688. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, PCB soldering, TO-220AB, 3A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 3A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 25W

NPN transistor, 5A, TO-92, TO-92, 20V. Collector current: 5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 50pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: AF output amplifier. Max hFE gain: 600. Minimum hFE gain: 340. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.35V. Vebo: 7V

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 0.2A, TO-92, TO-92, 45V. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 800mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-25. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 210 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.8A, TO-92, TO-92Ammo-Pack, 45V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 630. Minimum hFE gain: 250. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC327-40. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, 1A, TO-92, TO-92 ( Ammo Pack ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 80V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 160000. Minimum hFE gain: 8000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: VEBO 12V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V