NPN bipolar transistors

NPN transistor, 0.05A, TO-92, TO-92, 120V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 1200. Minimum hFE gain: 200. Marking on the case: C1841. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.07V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 50mA, TO-92, TO-92, 120V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI audio amplifier. Max hFE gain: 580. Minimum hFE gain: 150. Marking on the case: C1845. Equivalents: KSC1845. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: Samsung--0501-000354. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.07V. Vebo: 5V

NPN transistor, 1A, TO-126 (TO-225, SOT-32), TO-126B-A1, 35V. Collector current: 1A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126B-A1. Collector/emitter voltage Vceo: 35V. BE diode: no. Cost): 20pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 340. Minimum hFE gain: 85. Ic(pulse): 1.5A. Pd (Power Dissipation, Max): 5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Type of transistor: NPN. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V

NPN transistor, PCB soldering, TO-92, 20mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, PCB soldering, TO-3, 3.5A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 3.5A. RoHS: no. Component family: NPN power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC1875. Collector-emitter voltage Uceo [V]: 500V. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 3A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 3A. RoHS: no. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: C1881. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 30W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 0.05A, TO-92, TO-92M ( 9mm ), 200V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Video output. Max hFE gain: 300. Minimum hFE gain: 30. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused'. Type of transistor: NPN. Vcbo: 250V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 0.5A, 200V. Collector current: 0.5A. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Type of transistor: NPN

NPN transistor, 2A, 35V. Collector current: 2A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 470 MHz. Function: UHF-L. Pd (Power Dissipation, Max): 8W. Type of transistor: NPN

NPN transistor, 0.6A, TO-220, 40V. Collector current: 0.6A. Housing: TO-220. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 175 MHz. Function: VHF-Tr/E. Pd (Power Dissipation, Max): 1.3W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 300mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 300mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, PCB soldering, TO-92, 300mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 300mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, 0.1A, 35V. Collector current: 0.1A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 550 MHz. Type of transistor: NPN

NPN transistor, 2A, TO-220, TO-220, 300V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, PCB soldering, D18/C, 700mA. Housing: PCB soldering. Housing: D18/C. Collector current Ic [A], max.: 700mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/32V. Maximum dissipation Ptot [W]: 0.75W

NPN transistor, PCB soldering, E-33, 50mA. Housing: PCB soldering. Housing: E-33. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. Semiconductor material: silicon. FT: 4 MHz. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA940. BE diode: no. CE diode: no

NPN transistor, 4A, TO-220, TO-220, 75V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 75V. Quantity per case: 1. Semiconductor material: silicon. FT: 27 MHz. Pd (Power Dissipation, Max): 6W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 1.5A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 900mW. Spec info: complementary transistor (pair) 2SA966. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 1.5A, TO-220, 160V. Collector current: 1.5A. Housing: TO-220. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SA968. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN