NPN bipolar transistors

NPN transistor, 5A, TO-3 ( TO-204 ), TO-3, 800V. Collector current: 5A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: 0.3us

NPN transistor, 500mA, TO-39 ( TO-205 ), TO-39, 50V. Collector current: 500mA. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 50V. Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.3V. Vebo: 7V. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-39, 500mA. Housing: PCB soldering. Housing: TO-39. Collector current Ic [A], max.: 500mA. RoHS: no. Housing (JEDEC standard): TO-39. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N1893. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 70 MHz. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: NPN transistor

NPN transistor, 0.8A, TO-39 ( TO-205 ), TO-39, 40V. Collector current: 0.8A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 40V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 25pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-18, 600mA, TO-18 ( TO-206 ), TO-18, 40V. Housing: PCB soldering. Housing: TO-18. Collector current Ic [A], max.: 600mA. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 40V. RoHS: yes. Housing (JEDEC standard): TO-18. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2222A. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: NPN transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Tf(max): 60 ns. Tf(min): 60 ns. Type of transistor: NPN. Operating temperature: -60...+200°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Vebo: 6V

NPN transistor, 0.8A, TO-92, TO-92, 40V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Max hFE gain: 300. Minimum hFE gain: 35. Note: complementary transistor (pair) 2N2907A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-18, 800mA. Housing: PCB soldering. Housing: TO-18. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-18. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N2222A. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN transistor

NPN transistor, 0.6A, TO-92, TO-92 ( BULK Pack ), 40V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92 ( BULK Pack ). Collector/emitter voltage Vceo: 40V. Conditioning unit: 5000. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: Amplifier Transistor. Max hFE gain: 300. Minimum hFE gain: 35. Marking on the case: 2N2222A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 25 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Vebo: 6V

NPN transistor, 0.2A, TO-18 ( TO-206 ), TO-18, 40V. Collector current: 0.2A. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 40V. Resistor B: yes. BE diode: NPN transistor. BE resistor: PCB soldering. C(in): TO-18. Cost): TO-18. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 500 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 40. Ic(pulse): 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. Assembly/installation: PCB through-hole mounting. Tf(max): 15 ns. Tf(min): 15 ns. Type of transistor: NPN. Operating temperature: -60...+200°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V

NPN transistor, PCB soldering, TO-39, 1A, TO-39 ( TO-205 ), TO-39, 80V. Housing: PCB soldering. Housing: TO-39. Collector current Ic [A], max.: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 80V. RoHS: yes. Housing (JEDEC standard): TO-39. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3019. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Component family: NPN transistor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 140V. Maximum saturation voltage VCE(sat): 0.2V. Vebo: 7V

NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 80V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.2V. Vebo: 7V

NPN transistor, 60V, 15A, TO-3. Collector-Emitter Voltage VCEO: 60V. Collector current: 15A. Housing: TO-3. Type of transistor: NPN power transistor. Polarity: NPN. Power: 115W

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-3, 15A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 15A. RoHS: yes. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3055G. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 2.5 MHz. Maximum dissipation Ptot [W]: 115W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor

NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 350V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 350V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: S/VID. Max hFE gain: 160. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +200°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar NPN transistor'. Type of transistor: NPN. Vcbo: 450V. Saturation voltage VCE(sat): 0.5V. Vebo: 7V

NPN transistor, 1A, TO-39 ( TO-205 ), TO-39, 250V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 250V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: S/VID. Production date: 2014/06. Max hFE gain: 160. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 7V

NPN transistor, 10A, TO-3 ( TO-204 ), TO-3, 160V. Collector current: 10A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Number of terminals: 2. Pd (Power Dissipation, Max): 117W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 10A, TO-3 ( TO-204 ), TO-3, 160V. Collector current: 10A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Number of terminals: 2. Pd (Power Dissipation, Max): 117W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 30A, TO-3 ( TO-204 ), TO-3, 40V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, PCB soldering, TO-3, 20A, TO-3 ( TO-204 ), TO-3, 100V. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 100V. RoHS: no. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3772. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 200kHz. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor. Type of transistor: NPN. Vcbo: 60V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 160V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 140V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 140V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.4V. Maximum saturation voltage VCE(sat): 4 v. Vebo: 7V. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-3, 16A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 16A. RoHS: yes. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N3773G. Collector-emitter voltage Uceo [V]: 140V. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C. Component family: NPN power transistor