NPN bipolar transistors

NPN transistor, 8A, 600V. Collector current: 8A. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: HA, Hi-res. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 15A, 800V. Collector current: 15A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: HA hi-def.. Pd (Power Dissipation, Max): 180W. Spec info: MONITOR. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 0.7A, TO-92, TO-92, 30 v. Collector current: 0.7A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 270 MHz. Function: hFE1 1500, hFE2 600 . Pd (Power Dissipation, Max): 0.6W. Spec info: Lo-Sat Vce(sat)<0.5V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 3A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 8 MHz. Function: Switching Power Transistor. Pd (Power Dissipation, Max): 80W. Spec info: HFX series. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1200V

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 85W. Spec info: complementary transistor (pair) 2SA1673. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PML, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: SMPS. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1100V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), SOT-93, 600V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, D35/B, 100mA. Housing: PCB soldering. Housing: D35/B. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 50mA, 1200V. Collector current: 50mA. Collector/emitter voltage Vceo: 1200V. Quantity per case: 1. Semiconductor material: silicon. FT: 5.5 MHz. Function: TV Dynamic Focus Applications. Note: High-Voltage Switching Applications. Pd (Power Dissipation, Max): 10W. Spec info: TO-220F. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 6A, TO-3PFM ( 13-16A1A ), TO-3PFM, 1500V. Collector current: 6A. Housing: TO-3PFM ( 13-16A1A ). Housing (according to data sheet): TO-3PFM. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Compatibility: CVM4967A. Semiconductor material: silicon. FT: kHz. Function: Display-HA, Hi-res. Max hFE gain: 25. Ic(pulse): 16A. Equivalents: SAMSUNG 891 464744AA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused'. Tf(max): 0.4us. Type of transistor: NPN. Saturation voltage VCE(sat): 2V. Vebo: 6V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: Display-HA. Pd (Power Dissipation, Max): 50W. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, D-PAK ( TO-252 ), CPT3 ( DPAK ) ( TO252 ) ( SOT428 ), 80V. Collector current: 5A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): CPT3 ( DPAK ) ( TO252 ) ( SOT428 ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: Motor driver, LED driver. Max hFE gain: 270. Minimum hFE gain: 120. Ic(pulse): 10A. Marking on the case: C5103. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1952. Assembly/installation: surface-mounted component (SMD). Tf(max): 0.3 ns. Tf(min): 0.1 ns. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.15V. Vebo: 5V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: MONITOR HA,Hi-res. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 20A. Marking on the case: C5129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: fall time 0.15..03us (64kHz). Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 2A, TO-220FP, TO-220F, 180V. Collector current: 2A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 180V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: TV, SL. Max hFE gain: 320. Minimum hFE gain: 50. Marking on the case: C5171. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1930. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.16V. Vebo: 5V

NPN transistor, 10A, TO-3PN ( 2-16C1B ), 2-16C1B, 140V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Collector/emitter voltage Vceo: 140V. BE diode: no. Cost): 170pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5198 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1941. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 200pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1943. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN transistor, 15A, TO-3PF (SOT399, 2-16E3A), TO-3PML, 800V. Collector current: 15A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PML. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Ultrahigh-Definition CRT Display. Max hFE gain: 30. Minimum hFE gain: 4. Ic(pulse): 35A. Marking on the case: C5302. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Spec info: fast speed (tf=100ns typ). Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Spec info: complementary transistor (pair) 2SA1987. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 20A, 800V. Collector current: 20A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: Ultrahigh-Definition CRT Display Horizontal Def.Ou. Note: hFE 4...7 (Vce sat 3V, Vbe sat 1.5V). Spec info: 'Triple Diffused Planar Silicon Transistor'. Type of transistor: NPN. Vcbo: 1600V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Ic(pulse): 24A. Marking on the case: C5803. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V

NPN transistor, 23A, TO-264 ( TOP-3L ), 2-21F2A, 750V. Collector current: 23A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): 2-21F2A. Collector/emitter voltage Vceo: 750V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: For high resolution horizontal deflection, HD TV. Max hFE gain: 55. Minimum hFE gain: 4.5. Ic(pulse): 46A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 210W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.15us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN transistor, 15A, TO-220, TO-220F-3SG, 50V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220F-3SG. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 85pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 195 MHz. Function: Relay drivers, lamp drivers, motor drivers. Max hFE gain: 560. Minimum hFE gain: 200. Ic(pulse): 20A. Marking on the case: C6082. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 23W. RoHS: yes. Spec info: complementary transistor (pair) 2SA2210. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 6V

NPN transistor, 0.2A, 60V. Collector current: 0.2A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 220 MHz. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN

NPN transistor, 8A, TO-3PN ( 2-16C1B ), TO-3PN, 140V. Collector current: 8A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 140V. BE diode: no. Cost): 120pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: Audio Power Amplifier, DC-DC Converter. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) 2SB817. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V. Vebo: 6V

NPN transistor, 10A, TO-3 ( TO-204 ), TO-3, 110V. Collector current: 10A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 110V. Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Number of terminals: 2. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 130V. Saturation voltage VCE(sat): 1.5V. Vebo: 10V