NPN bipolar transistors

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 1.5A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 900mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA966. BE diode: no. CE diode: no

NPN transistor, 1.5A, TO-220, 160V. Collector current: 1.5A. Housing: TO-220. Collector/emitter voltage Vceo: 160V. Semiconductor material: silicon. FT: 100 MHz. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA968

NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. Cost): 3pF. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 700. Minimum hFE gain: 350. Marking on the case: C2240BL. Temperature: +125°C. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA970BL. BE diode: no. CE diode: no

NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. Cost): 3pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Marking on the case: C224GR. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA970GR. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 500mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, 1.5A, TO-220, TO-220, 120V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 35. Ic(pulse): 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 0.1A, 300V. Collector current: 0.1A. Collector/emitter voltage Vceo: 300V. Semiconductor material: silicon. FT: 80 MHz. Function: VID-L. Type of transistor: NPN. Quantity per case: 1

NPN transistor, PCB soldering, TO-236, 30mA. Housing: PCB soldering. Housing: TO-236. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 1.5A, TO-220, TO-220AB, 160V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 160V. Cost): 30pF. Semiconductor material: silicon. FT: 100MHz. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 3A. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Function: High-Voltage Switching, AF Power Amplifier. Spec info: complementary transistor (pair) 2SA1011. BE diode: no. CE diode: no

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/100V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. Cost): 20pF. Semiconductor material: silicon. FT: 20 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 160. Marking on the case: C2383 Y. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1013. BE diode: no. CE diode: no

NPN transistor, 0.15A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 0.15A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Marking on the case: BQ. Temperature: +155°C. Pd (Power Dissipation, Max): 200mW. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 400mV. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code BQ. Spec info: complementary transistor (pair) 2SA1037. BE diode: no. CE diode: no

NPN transistor, PCB soldering, P22/U, 50mA. Housing: PCB soldering. Housing: P22/U. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 0.1A, TO-92, TO-92, 300V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. Semiconductor material: silicon. FT: 70 MHz. Function: CSC2342. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Quantity per case: 1. Spec info: height 5mm

NPN transistor, 2A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 600. Minimum hFE gain: 70. Ic(pulse): 5A. Marking on the case: C2500. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: NPN Epitaxial Silicon Transistor. Type of transistor: NPN. Vcbo: 30 v. Saturation voltage VCE(sat): 0.2V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 90V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, PCB soldering, TO-3, 17A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 17A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 200V. Maximum dissipation Ptot [W]: 200W

NPN transistor, 10A, TO-3P ( TO3P ), TO-3P, 400V. Collector current: 10A. Housing: TO-3P ( TO3P ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 450V. Number of terminals: 3. Quantity per case: 1

NPN transistor, PCB soldering, D17/C, 50mA. Housing: PCB soldering. Housing: D17/C. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 150V. Maximum dissipation Ptot [W]: 0.75W

NPN transistor, PCB soldering, D8/C, 50mA. Housing: PCB soldering. Housing: D8/C. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, PCB soldering, D6/C, 20mA. Housing: PCB soldering. Housing: D6/C. Collector current Ic [A], max.: 20mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/30V. Maximum dissipation Ptot [W]: 0.1W

NPN transistor, 1A, 40V. Collector current: 1A. Collector/emitter voltage Vceo: 40V. Semiconductor material: silicon. FT: 150 MHz. Pd (Power Dissipation, Max): 0.6W. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 0.1A, TO-126F, TO-126F, 180V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 180V. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Function: hFE 100...200. Quantity per case: 1. BE diode: no. CE diode: no