Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 9.03$ | 9.03$ |
2 - 2 | 8.58$ | 8.58$ |
3 - 4 | 8.12$ | 8.12$ |
5 - 9 | 7.67$ | 7.67$ |
10 - 14 | 7.49$ | 7.49$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 9.03$ | 9.03$ |
2 - 2 | 8.58$ | 8.58$ |
3 - 4 | 8.12$ | 8.12$ |
5 - 9 | 7.67$ | 7.67$ |
10 - 14 | 7.49$ | 7.49$ |
NPN transistor, 8A, TO-264 ( TOP-3L ), TOP-3L, 160V - 2SD2222. NPN transistor, 8A, TO-264 ( TOP-3L ), TOP-3L, 160V. Collector current: 8A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Quantity in stock updated on 20/04/2025, 05:25.
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