NPN bipolar transistors

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SC-59 ( 2.9x1.5x1.15mm ), 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SC-59 ( 2.9x1.5x1.15mm ). Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: transistor with bias resistor network. Max hFE gain: 100. Minimum hFE gain: 60. Note: Panasonic NV-SD450. Note: B1GBCFLL0035. Marking on the case: 8B. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 338mW. RoHS: yes. Spec info: screen printing/SMD code 8B. Assembly/installation: surface-mounted component (SMD). Technology: Digital Transistors (BRT). Type of transistor: NPN. Vcbo: 50V

NPN transistor. BE diode: no. C(in): 9pF. Cost): 3.5pF. CE diode: no. Quantity per case: 1

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 9pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) NJW1302. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN transistor, 15A, 60V. Collector current: 15A. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Note: hFE 20...70. Note: complementary transistor (pair) NTE219. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 3.3V. Vebo: 7V

NPN transistor. BE diode: no. Cost): 135pF. CE diode: no. Quantity per case: 1

NPN transistor, 8A, SOT-199, SOT-199, 700V. Collector current: 8A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Made for Grundig. Pd (Power Dissipation, Max): 34W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, TO-92, 600mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 600mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P2N2222A. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 6.2A, SOT-89, SOT-89, 60V. Collector current: 6.2A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 35pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: High-Current Switching, low-saturation voltage. Max hFE gain: 500. Minimum hFE gain: 75. Ic(pulse): 15A. Note: complementary transistor (pair) PBSS4041PX. Marking on the case: 6F. Pd (Power Dissipation, Max): 0.6W. Spec info: screen printing/SMD code 6F. Assembly/installation: surface-mounted component (SMD). Tf (type): 220 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 35mV. Maximum saturation voltage VCE(sat): 320mV. Vebo: 5V

NPN transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 80. Ic(pulse): 100mA. Marking on the case: *08. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code P08/T08. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.15V. Vebo: 10V

NPN transistor, 0.5A, TO-92, TO-92, 40V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: NPN switching transistor. Pd (Power Dissipation, Max): 0.625W. Spec info: 130.41594. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 15V

NPN transistor, 0.2A, SOT-23 ( TO-236 ), SOT-23, 40V. Collector current: 0.2A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 500 MHz. Function: High Speed ​​Switching. Pd (Power Dissipation, Max): 0.25W. Spec info: screen printing/SMD code P1J, T1J. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 15V

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23, 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 40V. BE diode: no. C(in): 30pF. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: High Speed ​​Switching. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 0.8A. Marking on the case: p2X, t2X, W2X. Pd (Power Dissipation, Max): 0.25W. Spec info: screen printing/SMD code P2X, T2X, W2X, complementary transistor (pair) PMBT4401. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 0.75V. Vebo: 6V

NPN transistor, 0.5A, TO-92, TO-92, 75V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 75V. BE diode: no. Cost): 19pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: General Purpose Amplifier. Spec info: hFE 80...450. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 45V

NPN transistor, 0.5A, TO-92, TO-92, 75V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 75V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: General Purpose Amplifier. Spec info: hFE 240...600. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 45V

NPN transistor, 0.6A, TO-92, TO-92, 40V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 75pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: General Purpose Amplifier. Max hFE gain: 300. Minimum hFE gain: 35. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, PCB soldering (SMD), SOT-363, 100mA. Housing: PCB soldering (SMD). Housing: SOT-363. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: pair of NPN and PNP transistors. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: D*2. Collector-emitter voltage Uceo [V]: 50V. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23, 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 50V. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. Function: DTR.. Pd (Power Dissipation, Max): 0.2W. Spec info: screen printing/CMS code XJ. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, PCB soldering, ITO-218, 8A. Housing: PCB soldering. Housing: ITO-218. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: S2000N. Collector-emitter voltage Uceo [V]: 1.5 kV. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 1500V, 8A, TO-247-T. Collector-Emitter Voltage VCEO: 1500V. Collector current: 8A. Housing: TO-247-T. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Power: 50W. Built-in diode: yes

NPN transistor, 8A, TO-247, TO-247F, 1500V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247F. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 35pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) SAP15P. Type of transistor: NPN

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 35pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) SAP15P. Type of transistor: NPN

NPN transistor, 15A, 400V. Collector current: 15A. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23, 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 300V. BE diode: no. C(in): 11pF. Cost): 1.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier, SMD version of MPSA42. Minimum hFE gain: 25. Note: complementary transistor (pair) SMBTA92. Marking on the case: s1D. Pd (Power Dissipation, Max): 0.36W. RoHS: yes. Spec info: screen printing/SMD code S1D. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1.5A, TO-92, TO-92 (Ammo-Pack), 25V. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo-Pack). Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 200. Minimum hFE gain: 120. Marking on the case: S8050 C. Pd (Power Dissipation, Max): 1W. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V