NPN bipolar transistors

NPN transistor, 0.5A, 200V. Collector current: 0.5A. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Type of transistor: NPN

NPN transistor, 0.1A, 35V. Collector current: 0.1A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 550 MHz. Type of transistor: NPN

NPN transistor, PCB soldering, D18/C, 700mA. Housing: PCB soldering. Housing: D18/C. Collector current Ic [A], max.: 700mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/32V. Maximum dissipation Ptot [W]: 0.75W

NPN transistor, PCB soldering, E-33, 50mA. Housing: PCB soldering. Housing: E-33. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 4A, TO-220, TO-220, 75V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 75V. Quantity per case: 1. Semiconductor material: silicon. FT: 27 MHz. Pd (Power Dissipation, Max): 6W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1.5A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 900mW. Spec info: complementary transistor (pair) 2SA966. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 1.5A, TO-220, TO-220, 120V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 35. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 0.15A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 0.15A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Note: screen printing/SMD code BQ. Marking on the case: BQ. Number of terminals: 3. Temperature: +155°C. Pd (Power Dissipation, Max): 200mW. Spec info: complementary transistor (pair) 2SA1037. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 400mV

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 120V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 700. Minimum hFE gain: 200. Note: screen printing/SMD code DG. Marking on the case: DG. Number of terminals: 3. Pd (Power Dissipation, Max): 150mW. Spec info: complementary transistor (pair) 2SA1163. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 300mV

NPN transistor, PCB soldering, TO-236, 30mA. Housing: PCB soldering. Housing: TO-236. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.15W

NPN transistor, 300mA, TO-92, TO-92, 20V. Collector current: 300mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: For Muting and Switching. Max hFE gain: 1200. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 400mW. RoHS: yes. Spec info: Silicon NPN Epitaxial Type. Assembly/installation: PCB through-hole mounting. Tf(max): 130 ns. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.042V. Vebo: 25V

NPN transistor, PCB soldering, TO-92, 70mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 70mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 180V/160V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, 7A, TO-220, TO-220, 400V. Collector current: 7A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: Switching Regulator Applications. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 500V

NPN transistor, 3A, TO-220FP, TO-220F, 800V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 900V

NPN transistor, 15A, 230V, TO-3P ( TO-218 SOT-93 ), SOT-93. Collector current: 15A. Collector/emitter voltage Vceo: 230V. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 130W. Spec info: complementary transistor (pair) 2SA1294. Type of transistor: NPN. BE diode: no. Cost): 250pF. CE diode: no. Max hFE gain: 140. Minimum hFE gain: 40. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 17A, 230V. Collector current: 17A. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) 2SA1295. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220AB, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: hFE 15...30. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1100V

NPN transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3PB, 800V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: Switching Regulator Applications. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 20A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1100V. Saturation voltage VCE(sat): 2V. Vebo: 7V

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 150W. Spec info: Hi-deflect (MONITOR). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 800V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 150W. Spec info: Hi-deflect (MONITOR). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, TO-98, 100mA. Housing: PCB soldering. Housing: TO-98. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/18V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 0.02A, 25V. Collector current: 0.02A. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. FT: 450 MHz. Function: TV/IF. Type of transistor: NPN