NPN bipolar transistors

NPN transistor, 2A, SOT-89, SOT89, 20V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT89. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 22pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Max hFE gain: 375. Minimum hFE gain: 85. Ic(pulse): 3A. Marking on the case: CAC. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: screen printing/SMD code CAC. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 32V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 45V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP54/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: complementary transistor (pair) BCP51-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 25pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP 5516. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Spec info: complementary transistor (pair) BCP52-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 80V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP56/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: complementary transistor (pair) BCP53-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 10k Ohms. BE diode: no. BE resistor: 10k Ohms. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 70. Marking on the case: XCs. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Spec info: screen printing/CMS code XCs. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 1V

NPN transistor, PCB soldering (SMD), SOT-89, 500mA. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: Darlington NPN Transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: EF. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-89, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BL. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 6A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 6A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 4A, PCB soldering, TO-225. Collector current Ic [A], max.: 4A. Housing: PCB soldering. Housing: TO-225. Manufacturer's marking: BD441G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3

NPN transistor, PCB soldering, TO-220AB, 8A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD649. Collector-emitter voltage Uceo [V]: 120V. Maximum dissipation Ptot [W]: 62.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, SOT32, 80V. Housing: SOT32. Collector-Emitter Voltage VCEO: 80V. Type: Darlington transistor. Polarity: NPN. Power: 40W. Collector-Base Voltage VCBO: 80V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 750. Current Max 1: 4A. Series: BD679

NPN transistor, 100V, 4A, TO-126. Collector-Emitter Voltage VCEO: 100V. Collector current: 4A. Housing: TO-126. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Power: 40W

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD681G. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, TO220, 100V. Housing: TO220. Collector-Emitter Voltage VCEO: 100V. Type: Darlington transistor. Polarity: NPN. Power: 80W. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 100. Current Max 1: 12A. Series: BDW93

NPN transistor, TO220, 100V. Housing: TO220. Collector-Emitter Voltage VCEO: 100V. Type: Darlington transistor. Polarity: NPN. Power: 70W. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 750. Current Max 1: 10A. Series: BDX33

NPN transistor, TO220, 100V. Housing: TO220. Collector-Emitter Voltage VCEO: 100V. Type: Darlington transistor. Polarity: NPN. Power: 60W. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 750. Current Max 1: 8A. Series: BDX53

NPN transistor, PCB soldering, TO-92, 25mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 25mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF240. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 2A, 40V. Collector current: 2A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 860 MHz. Function: UHF-L. Pd (Power Dissipation, Max): 2W. Type of transistor: NPN

NPN transistor, SOT-223 ( TO-226 ), SOT-223. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: 'Smart High-Side Power Switch'. Equivalents: ISP452. RoHS: yes. Spec info: miniPROFET. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, PCB soldering (SMD), SOT-223, 500mA. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-261AA. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AS3. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: U8. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 250mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V. Collector current: 250mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 12V. Quantity per case: 1. Semiconductor material: silicon. FT: 400 MHz. Function: general purpose. Max hFE gain: 120. Minimum hFE gain: 25. Marking on the case: B2. Number of terminals: 3. Pd (Power Dissipation, Max): 0.225mW. RoHS: yes. Spec info: screen printing/SMD code B2. Assembly/installation: surface-mounted component (SMD). Tf(max): 18 ns. Tf(min): 12us. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 20V. Saturation voltage VCE(sat): 0.3V

NPN transistor, 1A, 120V. Collector current: 1A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 5W. Spec info: TO39. Type of transistor: NPN

NPN transistor, 7A, 60V. Collector current: 7A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 130V

NPN transistor, 8A, TO-247, TO-247, 700V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: 33 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V