NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P ( MT-100 ), 150V - 2SD2390-SKN
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 6.03$ | 6.03$ |
| 2 - 2 | 5.73$ | 5.73$ |
| 3 - 4 | 5.43$ | 5.43$ |
| 5 - 9 | 5.13$ | 5.13$ |
| 10 - 19 | 5.01$ | 5.01$ |
| 20 - 29 | 4.89$ | 4.89$ |
| 30 - 53 | 4.71$ | 4.71$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 6.03$ | 6.03$ |
| 2 - 2 | 5.73$ | 5.73$ |
| 3 - 4 | 5.43$ | 5.43$ |
| 5 - 9 | 5.13$ | 5.13$ |
| 10 - 19 | 5.01$ | 5.01$ |
| 20 - 29 | 4.89$ | 4.89$ |
| 30 - 53 | 4.71$ | 4.71$ |
NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P ( MT-100 ), 150V - 2SD2390-SKN. NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P ( MT-100 ), 150V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P ( MT-100 ). Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 55 MHz. Function: hFE 5000. Minimum hFE gain: 5000. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SB1560. BE diode: no. CE diode: no. Quantity in stock updated on 20/04/2025, 05:25.
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