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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 6.2A, 8.7A, 8.7A, 0.4 Ohms, TO-220, TO-220AB, 200V - PHP9NQ20T

N-channel transistor, 6.2A, 8.7A, 8.7A, 0.4 Ohms, TO-220, TO-220AB, 200V - PHP9NQ20T
Quantity excl. VAT VAT incl.
1 - 4 4.50$ 4.50$
5 - 9 4.28$ 4.28$
10 - 24 4.05$ 4.05$
25 - 49 3.83$ 3.83$
50 - 99 3.74$ 3.74$
100+ 3.51$ 3.51$
Quantity U.P
1 - 4 4.50$ 4.50$
5 - 9 4.28$ 4.28$
10 - 24 4.05$ 4.05$
25 - 49 3.83$ 3.83$
50 - 99 3.74$ 3.74$
100+ 3.51$ 3.51$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 6.2A, 8.7A, 8.7A, 0.4 Ohms, TO-220, TO-220AB, 200V - PHP9NQ20T. N-channel transistor, 6.2A, 8.7A, 8.7A, 0.4 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 6.2A. ID (T=25°C): 8.7A. Idss (max): 8.7A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 88W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS SOT78. Quantity in stock updated on 19/04/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 60
IRF640

IRF640

N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=...
IRF640
N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 72A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
IRF640
N-channel transistor, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 1300pF. Cost): 430pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 72A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no
Set of 1
1.58$ VAT incl.
(1.58$ excl. VAT)
1.58$

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