IRLR024N

Quantity	excl. VAT	VAT incl.
1 - 4	0.83$	0.83$
5 - 9	0.79$	0.79$
10 - 24	0.75$	0.75$
25 - 49	0.70$	0.70$
50 - 99	0.69$	0.69$
100 - 178	0.62$	0.62$

Quantity	U.P
1 - 4	0.83$	0.83$
5 - 9	0.79$	0.79$
10 - 24	0.75$	0.75$
25 - 49	0.70$	0.70$
50 - 99	0.69$	0.69$
100 - 178	0.62$	0.62$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 178

Set of 1

IRLR024N. C(in): 480pF. Cost): 130pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 72A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRLR024NPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 5V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!