Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.29$ | 1.29$ |
5 - 9 | 1.23$ | 1.23$ |
10 - 24 | 1.16$ | 1.16$ |
25 - 49 | 1.10$ | 1.10$ |
50 - 99 | 1.07$ | 1.07$ |
100 - 249 | 1.05$ | 1.05$ |
250 - 850 | 0.91$ | 0.91$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.29$ | 1.29$ |
5 - 9 | 1.23$ | 1.23$ |
10 - 24 | 1.16$ | 1.16$ |
25 - 49 | 1.10$ | 1.10$ |
50 - 99 | 1.07$ | 1.07$ |
100 - 249 | 1.05$ | 1.05$ |
250 - 850 | 0.91$ | 0.91$ |
IRLR2905. C(in): 1700pF. Cost): 400pF. Channel type: N. Conditioning: roll. Conditioning unit: 2000. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 160A. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.027 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 02:25.
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