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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V - IRF1010E

Quantity	excl. VAT	VAT incl.
1 - 4	2.05$	2.05$
5 - 9	1.94$	1.94$
10 - 24	1.84$	1.84$
25 - 49	1.74$	1.74$
50 - 97	1.70$	1.70$

Quantity	U.P
1 - 4	2.05$	2.05$
5 - 9	1.94$	1.94$
10 - 24	1.84$	1.84$
25 - 49	1.74$	1.74$
50 - 97	1.70$	1.70$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 97

Set of 1

N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V - IRF1010E. N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 250uA. On-resistance Rds On: 0.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. C(in): 2800pF. Cost): 880pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Fast Switching, Ultra Low On-Resistance. Id(imp): 330A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 88

IRF1010N

N-channel transistor, 60A, 85A, 250uA, 0.11 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 60A. ID (T=2...

Set of 1

1.93$ VAT incl.
(1.93$ excl. VAT)

1.93$

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IRF1010E

N-channel transistor, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=2...

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2.05$ VAT incl.
(2.05$ excl. VAT)

2.05$