IRF3710S

Quantity	excl. VAT	VAT incl.
1 - 4	3.48$	3.48$
5 - 9	3.30$	3.30$
10 - 24	3.13$	3.13$
25 - 49	2.96$	2.96$
50 - 59	2.89$	2.89$

Quantity	U.P
1 - 4	3.48$	3.48$
5 - 9	3.30$	3.30$
10 - 24	3.13$	3.13$
25 - 49	2.96$	2.96$
50 - 59	2.89$	2.89$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 59

Set of 1

IRF3710S. C(in): 3000pF. Cost): 640pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 180A. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.025 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 25/12/2024, 15:25.

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Delivery in 2-3 days, with postal tracking!