IXFH26N60Q

IXFH26N60Q. C(in): 4700pF. Cost): 580pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 104A. ID (T=25°C): 26A. Idss (max): 1mA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 360W. On-resistance Rds On: 0.25 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 80 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.5V. Spec info: dv/dt 10V/ns. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.