IRF5305

Quantity	excl. VAT	VAT incl.
1 - 4	1.57$	1.57$
5 - 9	1.49$	1.49$
10 - 24	1.42$	1.42$
25 - 49	1.34$	1.34$
50 - 82	1.31$	1.31$

Quantity	U.P
1 - 4	1.57$	1.57$
5 - 9	1.49$	1.49$
10 - 24	1.42$	1.42$
25 - 49	1.34$	1.34$
50 - 82	1.31$	1.31$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 82

Set of 1

IRF5305. C(in): 1200pF. Cost): 520pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.06 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!